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ZXTN25012EFH PDF预览

ZXTN25012EFH

更新时间: 2024-09-30 07:42:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 369K
描述
12V, SOT23, NPN medium power transistor

ZXTN25012EFH 数据手册

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ZXTN25012EFH  
12V, SOT23, NPN medium power transistor  
Summary  
BV  
BV  
> 12V  
> 6V  
CEO  
ECX  
h
> 500  
FE  
I
= 6A  
C(cont)  
V
< 32mV @ 1A  
= 23m  
CE(sat)  
CE(sat)  
R
P = 1.25W  
D
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
High power dissipation SOT23 package  
High peak current  
Very high gain  
Low saturation voltage  
6V reverse blocking voltage  
E
B
Applications  
C
MOSFET gate drivers  
Power switches  
Motor control  
Pinout - top view  
DC fans  
DC-DC converters  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTN25012EFHTA  
7
8
3,000  
Device marking  
1C3  
Issue 3 - March 2008  
© Zetex Semiconductors plc 2008  
1
www.zetex.com  

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