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ZTX550STOB PDF预览

ZTX550STOB

更新时间: 2024-02-11 03:26:52
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
2页 126K
描述
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX550STOB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:IN-LINE, R-PSIP-W3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.11最大集电极电流 (IC):1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

ZTX550STOB 数据手册

 浏览型号ZTX550STOB的Datasheet PDF文件第2页 
PNP SILICON PLANAR  
ZTX550  
ZTX551  
MEDIUM POWER TRANSISTORS  
ISSUE 1 – MARCH 94  
FEATURES  
*
*
*
60 Volt VCEO  
1 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX550 ZTX551  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
-45  
-80  
-60  
V
V
V
A
A
-5  
-2  
-1  
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation: at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
ZTX550  
ZTX551  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
-60  
-80  
-60  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) -45  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
-5  
Collector Cut-Off  
Current  
-0.1  
V
V
CB=-45V  
CB=-60V  
µA  
µA  
-0.1  
-0.1  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.25  
-0.35  
V
IC=-150mA,  
IB=-15mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
-1.1  
300  
-1.1  
150  
V
IC=-150mA,  
IB=-15mA*  
Static Forward  
Current Transfer  
Ratio  
100  
15  
50  
10  
IC=-150mA,  
VCE=-10V*  
IC=-1A, VCE=-10V*  
Transition  
Frequency  
fT  
150  
150  
MHz IC=-50mA, VCE=-10V  
f=100MHz  
3-194  

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