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ZHCS1006TC PDF预览

ZHCS1006TC

更新时间: 2024-02-06 13:27:11
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
3页 159K
描述
Rectifier Diode, Schottky, 1 Element, 0.9A, Silicon, MINIATURE PACKAGE-3

ZHCS1006TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MINIATURE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.31配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最大输出电流:0.9 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ZHCS1006TC 数据手册

 浏览型号ZHCS1006TC的Datasheet PDF文件第2页浏览型号ZHCS1006TC的Datasheet PDF文件第3页 
SOT23 SILICON HIGH CURRENT  
SCHOTTKY BARRIER DIODE ”SuperBAT”  
ZHCS1006  
ISSUE 1 - NOVEMBER 1997  
FEATURES:  
1
High current capability  
C
Low VF  
2
1
APPLICATIONS:  
Mobile telecomms, PCMIA & SCSI  
DC-DC Conversion  
A
3
PARTMARKING DETAILS : S16  
3
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VR  
VALUE  
UNIT  
V
Continuous Reverse Voltage  
Forward Current  
60  
900  
600  
1600  
IF  
mA  
mV  
mA  
Forward Voltage @ IF = 1000mA(typ)  
Average Peak Forward Current;D.C.= 50%  
VF  
IFAV  
IFSM  
12  
5
A
A
Non Repetitive Forward Current t100µs  
t10ms  
Power Dissipation at Tamb= 25° C  
Storage Temperature Range  
Junction Temperature  
Ptot  
Tstg  
Tj  
500  
-55 to + 150  
125  
mW  
° C  
° C  
ELECTRICAL CHARACTERISTICS (at T  
= 25° C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)R  
MIN.  
60  
TYP.  
80  
MAX. UNIT CONDITIONS.  
Reverse Breakdown  
Voltage  
V
IR= 300µA  
Forward Voltage  
VF  
245  
275  
330  
395  
455  
510  
620  
280  
320  
390  
470  
530  
600  
740  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
IF= 50mA*  
IF= 100mA*  
IF= 250mA*  
IF= 500mA*  
IF= 750mA*  
IF= 1000mA*  
IF= 1500mA*  
Reverse Current  
IR  
50  
100  
VR= 45V  
µA  
pF  
ns  
Diode Capacitance  
CD  
trr  
17  
12  
f= 1MHz,VR= 25V  
Reverse Recovery  
Time  
switched from  
IF = 500mA to IR =  
500mA  
Measured at IR = 50mA  
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle 2%  

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