Datasheet > Z0109NA

Z0109NA

更新时间： 2024-04-09 19:03:27

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	577K
描述
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers.

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Z0109NA 数据手册

WeEn Semiconductors

Z0109NA

4Q Triac

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak oﬀ-state

800

voltage

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_lead≤ 45 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; SIN

8.5

0.32

I²t

I²t for fusing

A²s

A/μs

dI_T/dt

rate of rise of on-state

current

I_G= 20 mA; T2+ G+

I_G= 20 mA; T2+ G-

I_G= 20 mA; T2- G-

I_G= 20 mA; T2- G+

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

average gate power

storage temperature

junction temperature

over any 20 ms period

0.1

150

125

stg

-40

°C

T_j

°C

Fig. 1. RMS on-state current as a function of lead

temperature; maximum values

f = 50 Hz; T_lead= 45 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

Z0109NA

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Product data sheet

19 November 2021

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