Datasheet > Z0109MUF6AA4

Z0109MUF6AA4

更新时间： 2022-09-10 15:46:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
12页	127K
描述
Standard 1A Triacs

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Z0109MUF6AA4 数据手册

Characteristics

Z01

Characteristics

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

SOT-223

TO-92

T_tab= 90 °C

T_L= 50 °C

On-state rms current

(full sine wave)

I_T(RMS)

SMBflat-3L T_tab= 107 °C

F = 50 Hz

F = 60 Hz

t_p= 10 ms

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, T_jinitial = 25 °C)

I_TSM

t = 16.7 ms

8.5

0.35

I t

I t Value for fusing

A s

Critical rate of rise of on-state current

I_G= 2 x I_GT, t_r≤ 100 ns

dI/dt

I_GM

F = 120 Hz T_j= 125 °C

A/µs

Peak gate current

t_p= 20 µs

T_j= 125 °C

P_G(AV)Average gate power dissipation

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 2.

Electrical characteristics (T_j= 25 °C, unless otherwise specified)

Z01

Symbol Test conditions Quadrant

Unit

I - II - III

(1)

I_GT

MAX.

V_D= 12 V,

R_L= 30 Ω

V_GT

V_GD

ALL

1.3

0.2

V_D= V_DRM

R_L= 3.3 kΩ,

T_j= 125 °C

ALL

MIN.

I_H(2) I_T= 50 mA

MAX.

I - III - IV

I_L

I_G= 1.2 I_GT

V_D= 67% V_DRMgate open

T_j= 110 °C

dV/dt ⁽²⁾

MIN.

100

V/µs

(dV/dt)_c(dI/dt)_c= 0.44 A/ms,

0.5

(2)

T_j= 110 °C

1. Minimum I_GTis guaranteed at 5% of I_GTmax.

2. For both polarities of A2 referenced to A1.

2/12

Doc ID 7474 Rev 10

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