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Z0109NA PDF预览

Z0109NA

更新时间: 2024-11-26 22:41:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 触发装置可控硅三端双向交流开关
页数 文件大小 规格书
8页 79K
描述
1A TRIACS

Z0109NA 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.1Is Samacsys:N
其他特性:SENSITIVE GATE配置:SINGLE
换向电压的临界上升率-最小值:2 V/us关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:2 V
最大维持电流:10 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
最大漏电流:0.2 mA元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0109NA 数据手册

 浏览型号Z0109NA的Datasheet PDF文件第2页浏览型号Z0109NA的Datasheet PDF文件第3页浏览型号Z0109NA的Datasheet PDF文件第4页浏览型号Z0109NA的Datasheet PDF文件第5页浏览型号Z0109NA的Datasheet PDF文件第6页浏览型号Z0109NA的Datasheet PDF文件第7页 
Z01  
®
1A TRIACS  
STANDARD  
Table 1: Main Features  
Symbol  
A2  
A1  
Value  
Unit  
IT(RMS)  
1
A
G
VDRM/VRRM  
600 to 800  
3 to 25  
V
IGT (Q )  
mA  
1
A2  
A1  
A2  
DESCRIPTION  
The Z01 series is suitable for general purpose AC  
switching applications. They can be found in appli-  
cations such as home appliances (electrovalve,  
pump, door lock, small lamp control), fan speed  
controllers,...  
Different gate current sensitivities are available, al-  
lowing optimized performances when controlled  
directly from microcontrollers.  
A1  
G
A2  
TO-92  
(Z01xxA)  
SOT-223  
(Z01xxN)  
Table 2: Order Codes  
Part Number  
Z01xxA  
Marking  
See page table 8 on  
page 7  
Z01xxN  
Table 3: Absolute Maximum Ratings  
Symbol  
Parameter  
SOT-223  
Value  
Unit  
Ttab = 90°C  
TL = 50°C  
RMS on-state current  
(full sine wave)  
IT(RMS)  
1
A
TO-92  
F = 50 Hz  
F = 60 Hz  
tp = 10 ms  
t = 20 ms  
8
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
ITSM  
A
t = 16.7 ms  
8.5  
²
²
²
0.35  
I t  
I t Value for fusing  
A s  
Critical rate of rise of on-state cur-  
Tj = 125°C  
dI/dt  
F = 120 Hz  
tp = 20 µs  
20  
A/µs  
rent IG = 2 x IGT , tr 100 ns  
IGM  
Tj = 125°C  
Tj = 125°C  
Peak gate current  
1
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
Storage junction temperature range  
Operating junction temperature range  
°C  
February 2005  
REV. 5  
1/8  

Z0109NA 替代型号

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