Datasheet > Z0107NA0412

Z0107NA0412

更新时间： 2022-09-10 15:47:25

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
15页	607K
描述
Logic level four-quadrant triac

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Z0107NA0412 数据手册

Z0107NA0

NXP Semiconductors

4Q Triac

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DRM

Parameter

Conditions

Min

Max

800

Unit

repetitive peak off-state voltage

RMS on-state current

I_T(RMS)

full sine wave; T_lead≤ 45 °C; see Figure 1;

see Figure 3; see Figure 2

I_TSM

non-repetitive peak on-state

current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

see Figure 4; see Figure 5

12.5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; sine-wave pulse

13.8

0.78

A²s

I²t

I²t for fusing

dI_T/dt

rate of rise of on-state current

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2+ G+

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2+ G-

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2- G-

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs;

T2- G+

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.1

150

125

-40

003aac264

003aaf977

1.2

T(RMS)

(A)

T(RMS )

(A)

0.8

0.4

-2

-1

-50

100

150

( C)

surge duration (s)

lead

Fig 1. RMS on-state current as a function of lead

temperature; maximum values

Fig 2. RMS on-state current as a function of surge

duration; maximum values

Z0107NA0

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Product data sheet

Rev. 3 — 12 May 2011

3 of 15

1 234 5 6 7...15

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