Datasheet > Z0107NA0412

Z0107NA0412

更新时间： 2022-09-10 15:47:25

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
15页	607K
描述
Logic level four-quadrant triac

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Z0107NA0412 数据手册

Z0107NA0

NXP Semiconductors

4Q Triac

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+; T_j= 25 °C;

see Figure 7

0.3

V_D= 12 V; I_T= 0.1 A; T2+ G-; T_j= 25 °C;

see Figure 7

V_D= 12 V; I_T= 0.1 A; T2- G-; T_j= 25 °C;

see Figure 7

V_D= 12 V; I_T= 0.1 A; T2- G+; T_j= 25 °C;

see Figure 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+; T_j= 25 °C;

see Figure 8

V_D= 12 V; I_G= 0.1 A; T2+ G-; T_j= 25 °C;

see Figure 8

V_D= 12 V; I_G= 0.1 A; T2- G-; T_j= 25 °C;

see Figure 8

V_D= 12 V; I_G= 0.1 A; T2- G+; T_j= 25 °C;

see Figure 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; see Figure 9

I_T= 1 A; T_j= 25 °C; see Figure 10

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

1.6

1.3

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

see Figure 11

V_D= 800 V; I_T= 0.1 A; T_j= 125 °C;

see Figure 11

0.2

I_D

off-state current

V_D= 800 V; T_j= 125 °C

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state voltage V_DM= 536 V; T_j= 110 °C; gate open

circuit; exponential waveform;

100

V/µs

see Figure 12

dV_com/dt

rate of change of

V_D= 400 V; T_j= 110 °C;

commutating voltage

dI_com/dt = 0.44 A/ms; gate open circuit

Z0107NA0

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Product data sheet

Rev. 3 — 12 May 2011

7 of 15

1...4 5 678 9 10...15

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