Z01
Characteristics
Figure 9.
On-state characteristics
(maximum values) (I = f(V
Figure 10. Relative variation of critical rate
of decrease of main current versus
(dV/dt)
)
TM
TM
c
I (A)
TM
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= T max.
j
j
1.0
Tj=max.
Vt0=0.95 V
Rd=400 mΩ
Z0109
T
j
= 25°C
Z0103
Z0107
Z0110
(dV/dt)c (V/µs)
V
(V)
TM
0.1
0.1
1.0
10.0
100.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 11. Relative variation of critical rate of Figure 12. SOT-223 and SMBflat-3L thermal
decrease of main current (dI/dt)
versus junction temperature
resistance junction to ambient
versus copper surface under case
Rth(j-a)(°C/W)
170
160
150
140
130
120
110
100
90
(dI/dt)c [T ] / (dI/dt)c [T Specified]
j
j
6
5
4
3
2
1
0
SMBF3L
SOT223
80
70
T (°C)
j
60
SCU(cm²)
0
25
50
75
100
125
50
0
1
2
3
4
5
Figure 13. Relative variation of static dV/dt immunity versus junction temperature (gate open)
dV/dt [Tj] / dV/dt [Tj=125 °C]
6
VD=VR=402V
5
4
3
2
1
Tj(°C)
0
25
50
75
100
125
Doc ID 7474 Rev 10
5/12