Datasheet > Z0103MN/T3

Z0103MN/T3

更新时间： 2022-03-03 21:07:48

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
12页	178K
描述
Logic level four-quadrant triac

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Z0103MN/T3 数据手册

Z0103MN

NXP Semiconductors

Logic level four-quadrant triac

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GTgate trigger current

V_D= 12 V; T_j= 25 °C; T2+ G-;

see Figure 6

V_D= 12 V; T_j= 25 °C; T2- G-

V_D= 12 V; T_j= 25 °C; T2+ G+

V_D= 12 V; T_j= 25 °C; T2- G+

I_L

latching current

V_D= 12 V; T_j= 25 °C; I_G= 0.1 A; T2+ G-;

see Figure 7

V_D= 12 V; T_j= 25 °C; I_G= 0.1 A; T2+ G+

V_D= 12 V; T_j= 25 °C; I_G= 0.1 A; T2- G+

V_D= 12 V; T_j= 25 °C; I_G= 0.1 A; T2- G-

V_D= 12 V; T_j= 25 °C; see Figure 10

I_T= 1 A; see Figure 8

I_H

holding current

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

1.6

1.3

I_T= 0.1 A; V_D= 12 V; T_j= 25 °C;

see Figure 9

I_T= 0.1 A; V_D= 600 V; T_j= 125 °C

V_D= 600 V; T_j= 125 °C

0.2

I_D

off-state current

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 110 °C; gate open

V/µs

voltage

circuit; see Figure 11

dV_com/dt

rate of rise of

V_D= 400 V; T_j= 110 °C;

0.5

commutating voltage

dI_com/dt = 0.44 A/ms; gate open circuit

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GT(25°C)

L(25°C)

(1)

(2)

(3)

(4)

−50

100

150

100

150

T (°C)

Fig 7. Normalized latching current as a function of

junction temperature

Fig 6. Normalized gate trigger current as a function of

junction temperature

Z0103MN_3

Product data sheet

Rev. 03 — 5 August 2009

6 of 12

1...3 4 567 8 9...12

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