Datasheet > Z0103MN/T3

Z0103MN/T3

更新时间： 2022-03-03 21:07:48

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
12页	178K
描述
Logic level four-quadrant triac

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Z0103MN/T3 数据手册

Z0103MN

NXP Semiconductors

Logic level four-quadrant triac

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

600

I_T(RMS)

dI_T/dt

RMS on-state current

half sine wave; T_sp≤ 89 °C; see Figure 1 and 4

rate of rise of on-state I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs; T2+ G-

current

A/µs

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs; T2+ G+

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs; T2- G+

I_T= 1 A; I_G= 20 mA; dI_G/dt = 100 mA/µs; T2- G-

peak gate current

I_GM

P_GM

T_stg

T_j

peak gate power

storage temperature

-40

150

125

8.5

°C

junction temperature

°C

I_TSM

non-repetitive peak

on-state current

full sine wave; t_p= 16.7 ms; T_j(init)= 25 °C

full sine wave; t_p= 20 ms; T_j(init)= 25 °C;

see Figure 2 and 3

I²t

I²t for fusing

t_p= 10 ms; sine-wave pulse

0.32

0.1

A²s

P_G(AV)

average gate power

003aac259

2.0

conduction form

P_tot

(W)

angle

(degrees)

factor

1.6

1.2

0.8

0.4

0.0

120

180

α= 180°

2.8

2.2

1.9

1.57

120°

90°

60°

30°

0.2

0.4

0.6

0.8

1.2

I_T(RMS)(A)

Fig 1. Total power dissipation as a function of RMS on-state current; maximum values

Z0103MN_3

Product data sheet

Rev. 03 — 5 August 2009

3 of 12

1 234 5 6 7...12

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