YJG210G06AR
Electrical Characteristics (T =25℃ unless otherwise noted)
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J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
VGS= 0V, ID=250μA
VDS=60V, VGS=0V
VDS=60V, VGS=0V, Tj=150℃
VGS= ±20V, VDS=0V
VDS= VGS, ID=250μA
VGS=10V, ID=50A
VGS=10V, ID=20A
VGS=4.5V, ID=20A
IS=50A, VGS=0V
60
-
-
-
1
V
-
IDSS
μA
-
-
100
±100
2.5
1.6
1.6
2.5
1.2
-
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
-
-
nA
V
VGS(th)
1.0
1.8
1.2
1.2
1.8
-
-
-
-
-
-
-
Static Drain-Source On-Resistance
RDS(ON)
mΩ
Diode Forward Voltage
Gate resistance
VSD
RG
IS
V
Ω
A
f=1MHz
2.1
-
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
210
Ciss
Coss
Crss
-
-
-
6180
2080
70
-
-
-
Output Capacitance
VDS=30V, VGS=0V, f=500KHz
pF
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Qg
Qgs
Qgd
Qrr
trr
-
-
-
-
-
-
-
-
-
119
27
28
67
56
19
53
82
48
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain Charge
VGS=10V, VDS=30V, ID=105A
IF=60A, di/dt=100A/us
nC
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
nC
ns
tD(on)
tr
tD(off)
tf
Turn-on Rise Time
VGS=10V, VDD=30V, ID=105A
nS
RGEN=3Ω
Turn-off Delay Time
Turn-off fall Time
A. Repetitive rating; pulse width limited by max. junction temperature.
B. TJ=25℃, VG=10V, RG=25Ω, L=0.5mH, IAS=48A.
C. Pd is based on max. junction temperature, using junction-case thermal resistance.
D. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25℃. The
maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.
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S-E455
Rev.1.0,27-Oct-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com