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YA981S6R_10 PDF预览

YA981S6R_10

更新时间: 2022-09-10 16:23:05
品牌 Logo 应用领域
富士电机 - FUJI 二极管快速恢复二极管
页数 文件大小 规格书
6页 523K
描述
Low-Loss Fast Recovery Diode

YA981S6R_10 数据手册

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http://www.fujisemi.com  
FUJI Diode  
YA981S6R  
Low-Loss Fast Recovery Diode  
Maximum Rating and Characteristics  
Maximum ratings (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Ratings  
Units  
Repetitive peak reverse voltage  
V
RRM  
-
600  
V
50Hz Square wave duty =1/2  
Tc = 99˚C  
Average forward current  
I
FAV  
8
A
Non-repetitive forward surge current  
Operating junction temperature  
Storage temperature  
I
FSM  
Sine wave, 10ms 1shot  
40  
150  
A
Tj  
-
-
˚C  
˚C  
Tstg  
-40 to +150  
Electrical characteristics (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Maximum  
3.0  
Units  
V
Forward voltage  
V
F
IF =8 A  
Reverse current  
I
R
V
R
=VRRM  
25  
µA  
Reverse recovery time  
Thermal resistance  
trr  
I
F
=0.1A, I  
R
=0.2A, Irec =0.05A  
0.026  
2.5  
µS  
Rth(j-c)  
Junction to case  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Maximum  
0.3 to 0.5  
2.0  
Units  
N•m  
g
Mounting torque  
Approximate mass  
Recommended torque  
-
1

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