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XCV100E-6BG352I PDF预览

XCV100E-6BG352I

更新时间: 2024-01-25 16:18:08
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赛灵思 - XILINX 现场可编程门阵列
页数 文件大小 规格书
5页 89K
描述
Virtex-E 1.8 V Field Programmable Gate Arrays

XCV100E-6BG352I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:BGA-352针数:352
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.81
最大时钟频率:357 MHzCLB-Max的组合延迟:0.47 ns
JESD-30 代码:S-PBGA-B352JESD-609代码:e0
长度:35 mm湿度敏感等级:3
可配置逻辑块数量:600等效关口数量:32400
输入次数:196逻辑单元数量:2700
输出次数:196端子数量:352
最高工作温度:85 °C最低工作温度:
组织:600 CLBS, 32400 GATES封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装等效代码:BGA352,26X26,50
封装形状:SQUARE封装形式:GRID ARRAY, LOW PROFILE
峰值回流温度(摄氏度):225电源:1.2/3.6,1.8 V
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY认证状态:Not Qualified
座面最大高度:1.7 mm子类别:Field Programmable Gate Arrays
最大供电电压:1.89 V最小供电电压:1.71 V
标称供电电压:1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn63Pb37)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:35 mm
Base Number Matches:1

XCV100E-6BG352I 数据手册

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Virtex™-E 1.8 V  
Field Programmable Gate Arrays  
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DS022-1 (v2.2) November 9, 2001  
Preliminary Product Specification  
Features  
Fast, High-Density 1.8 V FPGA Family  
High-Performance Built-In Clock Management Circuitry  
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Densities from 58 k to 4 M system gates  
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Eight fully digital Delay-Locked Loops (DLLs)  
130 MHz internal performance (four LUT levels)  
Designed for low-power operation  
Digitally-Synthesized 50% duty cycle for Double  
Data Rate (DDR) Applications  
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Clock Multiply and Divide  
PCI compliant 3.3 V, 32/64-bit, 33/ 66-MHz  
Zero-delay conversion of high-speed LVPECL/LVDS  
clocks to any I/O standard  
Highly Flexible SelectI/O+™ Technology  
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Supports 20 high-performance interface standards  
Flexible Architecture Balances Speed and Density  
Up to 804 singled-ended I/Os or 344 differential I/O  
pairs for an aggregate bandwidth of > 100 Gb/s  
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Dedicated carry logic for high-speed arithmetic  
Dedicated multiplier support  
Differential Signalling Support  
Cascade chain for wide-input function  
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LVDS (622 Mb/s), BLVDS (Bus LVDS), LVPECL  
Differential I/O signals can be input, output, or I/O  
Compatible with standard differential devices  
Abundant registers/latches with clock enable, and  
dual synchronous/asynchronous set and reset  
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Internal 3-state bussing  
LVPECL and LVDS clock inputs for 300+ MHz  
clocks  
IEEE 1149.1 boundary-scan logic  
Die-temperature sensor diode  
Proprietary High-Performance SelectLink™  
Technology  
Supported by Xilinx Foundation™ and Alliance Series™  
Development Systems  
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Double Data Rate (DDR) to Virtex-E link  
Web-based HDL generation methodology  
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Further compile time reduction of 50%  
Internet Team Design (ITD) tool ideal for  
million-plus gate density designs  
Sophisticated SelectRAM+™ Memory Hierarchy  
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1 Mb of internal configurable distributed RAM  
Up to 832 Kb of synchronous internal block RAM  
True Dual-Port™ BlockRAM capability  
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Wide selection of PC and workstation platforms  
SRAM-Based In-System Configuration  
Unlimited re-programmability  
Advanced Packaging Options  
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Memory bandwidth up to 1.66 Tb/s (equivalent  
bandwidth of over 100 RAMBUS channels)  
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0.8 mm Chip-scale  
1.0 mm BGA  
1.27 mm BGA  
HQ/PQ  
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Designed for high-performance Interfaces to  
External Memories  
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200 MHz ZBT* SRAMs  
200 Mb/s DDR SDRAMs  
Supported by free Synthesizable reference design  
0.18 m 6-Layer Metal Process  
100% Factory Tested  
* ZBT is a trademark of Integrated Device Technology, Inc.  
© 2001 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm.  
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.  
DS022-1 (v2.2) November 9, 2001  
Preliminary Product Specification  
www.xilinx.com  
1-800-255-7778  
Module 1 of 4  
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XCV100E-6BG352I 替代型号

型号 品牌 替代类型 描述 数据表
XCV100E-7BG352C XILINX

完全替代

Virtex-E 1.8 V Field Programmable Gate Arrays
XCV100E-6BG352C XILINX

完全替代

Virtex-E 1.8 V Field Programmable Gate Arrays

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