Datasheet > XBS303V17R-G

XBS303V17R-G

更新时间： 2024-02-24 08:29:45

品牌	Logo	应用领域
特瑞仕 - TOREX		二极管
页数	文件大小	规格书
3页	103K
描述
Schottky Barrier Diode, 3A, 30V Type

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中文翻译

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数据手册

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XBS303V17R-G 数据手册

XBS303V17R-G

Schottky Barrier Diode, 3A, 30V Type

■FEATURES

ETR1614-001a

■APPLICATIONS

●Rectification

Forward Voltage

: V_F=0.355V (TYP.)

Forward Current

: I_F(AVE)=3A

●Protection against reverse connection of battery

Repetitive Peak Reverse Voltage : V_RM=30V

■PACKAGING INFORMATION

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

SYMBOL

VRM

RATINGS

UNIT

Repetitive Peak Reverse Voltage

Reverse Voltage (DC)

Forward Current (Average)

Non Continuous

Forward Surge Current^*1

IF(AVE)

IFSM

Junction Temperature

125

℃

Storage Temperature Range

Tstg

-55～+150

*1： Non continuous high amplitude 60Hz half-sine wave.

* When the IC is operated continuously under high load conditions such as high temperature,

high current and high voltage, it may have the case that reliability reduces drastically even if

under the absolute maximum ratings. Adequate “Derating” should be taken into

consideration while designing.

Cathode Bar

■MARKING RULE

①②③④⑤⑥: 303V17(Product Number)

Unit: mm

SMA

⑦⑧

: Assembly Lot Number

■PRODUCT NAME

PRODUCT NAME

DEVICE ORIENTATION

XBS303V17R-G

XBS303V17R

SMA (Halogen & Antimony free)

SMA

* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

* The device orientation is fixed in its embossed tape pocket.

■ELECTRICAL CHARACTERISTICS

Ta=25℃

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN.

TYP.

0.265

0.295

0.355

0.35

385

MAX.

0.34

0.36

0.39

VF1

VF2

VF3

I_F=0.5A

I_F=1A

Forward Voltage

I_F=3A

Reverse Current

V_R=30V

Inter-Terminal Capacity

Reverse Recovery Time^*2

*2：trr measurement circuit

V_R=1V , f=1MHz

trr

I_F=I_R=10mA , irr=1mA

Bias

Device Under test

Oscilloscope

Pulse Generatrix

1/3

12 3

中文翻译

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