Datasheet > WPM3401-3

WPM3401-3

更新时间： 2024-02-01 21:20:37

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	1071K
描述
P-Channel Enhancement Mode MOSFET Power Management in Note book

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WPM3401-3 数据手册

Parameter

Product specification

WPM3401

к!

Absolute Maximum Ratings ^(TA=ꢀ5unless otherwise specified)

Parameter

Symlbol

ꢀ

Unit

Value

V_DS

V_GS

Drain-Source voltage

Gate-Source Voltage

-30

1ꢀ

I_D

Continuous Drain Steady-State

TA=ꢀ5ć

TA=70ć

-4.6

-3.6

-ꢀ0

1.3

0.8

Current

Steady-State

I_DM

P_D

Pulse Drain Current

Power Dissipation

TA=ꢀ5ć

TA=70ć

T_J

Tstg

R^șJA

Operating Junction Temperature Range

Storage Temperature Range

-55~150

Resistance-Junction

Thermal

Ambient

ć/W

Electrical Characteristics

(T^A=ꢀ5к Unless otherwise noted)

Parameter

Static

Symbol

Conditions

Min.

Typ

Max. Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V^(BR)DSSV^GS=0V,I^D=-ꢀ50uA

V^GS(th)V^DS=V^GS,I^D=-ꢀ50uA

-30

-0.5

-1.5

-1.0

Gate Leakage Current

I^GSS

V^DS=0V,V^GS= 12V

V^DS=-ꢀ4V,V^GS=0V

T^J=85к

100

-1

Zero Gate Voltage Drain Current

I^DSS

-5

ID(on)

V^DS= -5V,V^GS=-4.5V

-10

On State Drain Current (Pulse)

Drain-Source On-Resistance

0.053

0.056

0.038

0.043

V^GS=-10V,I^D=-4.3A

V^GS=-4.5V,I^D=-3.5A

V^DS=-15V,I^D=-4.3A

R^DS(on)

Forward Transconductance

Diode Forward Voltage

gfs

V_SD

-1.5

-0.75

I^S= -1.0A,V^GS

=0V

Dynamic

Total Gate Charge

Q^g

Q^gs

Q^gd

C^iss

C^oss

C^rss

t^d(on)

t^r

ꢀ7

V^DS=-15V,V^GS=-10V

I^D= -4.3A

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

1.7

1ꢀ50

106

V^DS=-15V,V^GS=0V

f=1MHz

Turn-On Time

Turn-Off Time

V^DD=-15V,R^L=15ȍ

I^DŁ-1.0A,V^GEN=-10V

R^G=6ȍ

t^d(off)

t^f

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