Datasheet > WN3S20200DT

WN3S20200DT

更新时间： 2024-04-09 19:01:14

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描述
Power Schottky diode in TO252 (DPAK) surface-mountable plastic package.

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WN3S20200DT 数据手册

WeEn Semiconductors

WN3S20200DT

Power Schottky diode

FSM

= 25 °Cmax

j(init)

Fig. 3. Average forward current as a function of

mounting base temperature; maximum values

Fig. 4. Non-repetitive peak forward current as a

function of pulse width; sinusoidal waveform;

maximum values

WN3S20200DT

All information provided in this document is subject to legal disclaimers.

22 November 2022

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