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WMS128K8L-35CM PDF预览

WMS128K8L-35CM

更新时间: 2024-11-19 20:13:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 输入元件静态存储器输出元件内存集成电路
页数 文件大小 规格书
11页 1068K
描述
Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, DIP-32

WMS128K8L-35CM 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:32
Reach Compliance Code:compliant风险等级:5.64
最长访问时间:35 nsJESD-30 代码:R-CDIP-T32
JESD-609代码:e0长度:42.8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:5.13 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

WMS128K8L-35CM 数据手册

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WMS128K8-XXX  
128Kx8 MONOLITHIC SRAM, SMD 5962-96691  
FEATURES  
 Access Times 15, 17, 20, 25, 35, 45, 55ns  
 32 pin, Rectangular Ceramic Leadless Chip Carrier  
(Package 601)  
 Revolutionary, Center Power/Ground Pinout JEDEC  
Approved  
 MIL-STD-883 Compliant Devices Available  
 Commercial, Industrial and Military Temperature Range  
 5 Volt Power Supply  
• 32 lead Ceramic SOJ (Package 101)  
• 36 lead Ceramic Flat Pack (Package 226)  
Evolutionary, Corner Power/Ground Pinout JEDEC  
 Low Power CMOS  
Approved  
 2V Data Retention Devices Available (Low Power Version)  
 TTL Compatible Inputs and Outputs  
• 32 pin Ceramic DIP (Package 300)  
• 32 lead Ceramic SOJ (Package 101)  
• 32 lead Ceramic Flat Pack (Package 206)  
This product is subject to change without notice.  
Revolutionary Pinout  
Evolutionary Pinout  
32 DIP  
32 CSOJ (DE)  
36 FLAT PACK  
Top View  
32 CSOJ (DR)  
Top View  
32 FLATPACK (FE)  
Top View  
32 CLCC  
Top View  
A0  
A1  
A2  
1
2
3
4
5
6
7
8
32 A16  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O0  
I/O1  
I/O2  
GND  
1
2
3
4
5
6
7
8
32  
VCC  
NC  
A0  
A1  
A2  
A3  
CS#  
I/O0  
I/O1  
VCC  
GND  
I/O2  
I/O3  
WE#  
A4  
1
2
3
4
5
6
7
8
36 NC  
35 A16  
34 A15  
33 A14  
32 A13  
31 OE#  
30 I/O7  
29 I/O6  
28 GND  
31 A15  
30 A14  
29 A13  
28 OE#  
27 I/O8  
26 I/O7  
25 GND  
31 A15  
30 NC  
29 WE#  
28 A13  
27 A8  
4
3
2
1
32 31 30  
29 WE#  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
I/O0 13  
5
6
7
8
9
A3  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
CS#  
I/O1  
I/O2  
VCC  
GND  
I/O3  
I/O4  
WE#  
A4  
26 A9  
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
9
24  
VCC  
9
9
10  
11  
12  
13  
14  
15  
16  
23 I/O6  
22 I/O5  
21 A12  
20 A11  
19 A10  
18 A9  
10  
11  
12  
13  
14  
15  
16  
10  
11  
12  
13  
14  
15  
16  
17  
18  
27  
VCC  
26 I/O5  
25 I/O4  
24 A12  
23 A11  
22 A10  
21 A9  
14 15 16 17 18 19 20  
A5  
A6  
A7  
A5  
A6  
A7  
NC  
17 A8  
20 A8  
19 NC  
Pin Description  
A0-16  
Address Inputs  
Data Input/Output  
Chip Select  
I/O0-7  
CS  
OE  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
WE  
VCC  
GND  
Microsemi Corporation reserves the right to change products or specications without notice.  
March 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 6  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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