生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | PEAK TURN-OFF CURRENT IS 1200A |
标称电路换相断开时间: | 140 µs | 配置: | SINGLE |
最大直流栅极触发电流: | 1300 mA | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1180 A | 断态重复峰值电压: | 2700 V |
重复峰值反向电压: | 2100 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | GATE TURN-OFF SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG12027R22 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1180A I(T)RMS, 2700V V(DRM), 2200V V(RRM), 1 Element | |
WG12027R23 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2700 V, GATE TURN-OFF SCR | |
WG12027R24 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2700 V, GATE TURN-OFF SCR | |
WG12027R25 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2700 V, GATE TURN-OFF SCR | |
WG12027R26 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1180A I(T)RMS, 2700V V(DRM), 2600V V(RRM), 1 Element | |
WG12028 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1180A I(T)RMS, 645000mA I(T), 2800V V(DRM), 100V V(RRM), 1 Element | |
WG1202801 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2800 V, GATE TURN-OFF SCR | |
WG12028F | IXYS |
获取价格 |
Gate Turn-Off SCR, 980A I(T)RMS, 550000mA I(T), 2800V V(DRM), 100V V(RRM), 1 Element | |
WG12028F01 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2800 V, GATE TURN-OFF SCR | |
WG12028FR | IXYS |
获取价格 |
Symmetrical GTO SCR, 980A I(T)RMS, 550000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element |