5秒后页面跳转
WG12021R18 PDF预览

WG12021R18

更新时间: 2024-01-21 22:33:13
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 220K
描述
Gate Turn-Off SCR, 1600A I(T)RMS, 2100V V(DRM), 1800V V(RRM), 1 Element

WG12021R18 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:PEAK TURN-OFF CURRENT IS 1200A标称电路换相断开时间:100 µs
配置:SINGLE最大直流栅极触发电流:1300 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1600 A
断态重复峰值电压:2100 V重复峰值反向电压:1800 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

WG12021R18 数据手册

 浏览型号WG12021R18的Datasheet PDF文件第2页浏览型号WG12021R18的Datasheet PDF文件第3页浏览型号WG12021R18的Datasheet PDF文件第4页 

与WG12021R18相关器件

型号 品牌 获取价格 描述 数据表
WG12021R19 IXYS

获取价格

Gate Turn-Off SCR, 1600A I(T)RMS, 2100V V(DRM), 1900V V(RRM), 1 Element
WG12021R20 IXYS

获取价格

Gate Turn-Off SCR, 1600A I(T)RMS, 2100V V(DRM), 2000V V(RRM), 1 Element
WG12022 IXYS

获取价格

Silicon Controlled Rectifier, 1600 A, 2200 V, GATE TURN-OFF SCR
WG12022F IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 2200V V(DRM), 100V V(RRM), 1 Element
WG12022F01 IXYS

获取价格

Gate Turn-Off SCR, 2200V V(DRM), 100V V(RRM), 1 Element
WG12022FR ETC

获取价格

THYRISTOR|GTO|TO-200VAR74W
WG12022FR02 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 2200V V(DRM), 200V V(RRM), 1 Element
WG12022FR03 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 2200V V(DRM), 300V V(RRM), 1 Element
WG12022FR04 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 2200V V(DRM), 400V V(RRM), 1 Element
WG12022FR06 IXYS

获取价格

Silicon Controlled Rectifier, 1340 A, 2200 V, GATE TURN-OFF SCR