Wisdom Semiconductor
WFD430/WFU430
N-Channel MOSFET
Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
{
2. Drain
Symbol
●
■ Gate Charge (Typical 25nC)
◀
▲
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
●
1. Gate
{
●
■ Maximum Junction Temperature Range (150°C)
3. Source
{
General Description
D-PAK, I-PAK
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
2
1
3
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
500
Units
VDSS
Drain to Source Voltage
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
4.0
ID
2.4
16
A
A
V
IDM
(Note 1)
VGS
Gate to Source Voltage
±30
292
EAS
EAR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
4.8
dv/dt
5.5
V/ns
W
Total Power Dissipation(@TC = 25 °C)
48
PD
Derating Factor above 25 °C
0.38
W/°C
°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
TL
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
-
-
-
-
-
-
2.6
50
°C/W
°C/W
°C/W
110
* When mounted on the minimum pad size recommended (PCB Mount)