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WFU430 PDF预览

WFU430

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
威德姆 - WISDOM /
页数 文件大小 规格书
8页 830K
描述
N-Channel MOSFET

WFU430 数据手册

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Wisdom Semiconductor  
WFD430/WFU430  
N-Channel MOSFET  
Features  
RDS(on) (Max 1.4 )@VGS=10V  
{
2. Drain  
Symbol  
Gate Charge (Typical 25nC)  
Improved dv/dt Capability, High Ruggedness  
100% Avalanche Tested  
1. Gate  
{
Maximum Junction Temperature Range (150°C)  
3. Source  
{
General Description  
D-PAK, I-PAK  
This Power MOSFET is produced using Wisdom’s advanced  
planar stripe, DMOS technology. This latest technology has been  
especially designed to minimize on-state resistance, have a high  
rugged avalanche characteristics. These devices are well suited  
for high efficiency switching DC/DC converters, switch mode power  
supply, DC-AC converters for uninterruped power supply, motor  
control.  
2
1
3
1
2
3
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
500  
Units  
VDSS  
Drain to Source Voltage  
V
A
Continuous Drain Current(@TC = 25°C)  
Continuous Drain Current(@TC = 100°C)  
Drain Current Pulsed  
4.0  
ID  
2.4  
16  
A
A
V
IDM  
(Note 1)  
VGS  
Gate to Source Voltage  
±30  
292  
EAS  
EAR  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
(Note 2)  
(Note 1)  
(Note 3)  
mJ  
mJ  
4.8  
dv/dt  
5.5  
V/ns  
W
Total Power Dissipation(@TC = 25 °C)  
48  
PD  
Derating Factor above 25 °C  
0.38  
W/°C  
°C  
TSTG, TJ  
Operating Junction Temperature & Storage Temperature  
- 55 ~ 150  
Maximum Lead Temperature for soldering purpose,  
1/8 from Case for 5 seconds.  
TL  
300  
°C  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min.  
Typ.  
Max.  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
-
-
-
-
-
-
2.6  
50  
°C/W  
°C/W  
°C/W  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  

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