Datasheet > WFU730

WFU730

更新时间： 2022-09-11 11:14:08

品牌	Logo	应用领域
稳先微 - WINSEMI		/
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描述
Silicon N-Channel MOSFET

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WFU730 数据手册

WFU730

Silicon N-Channel MOSFET

Features

■5.5A,400V, R_DS(on)(Max 1.0Ω)@V_GS=10V

■ Ultra-low Gate Charge(Typical 32nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. This devices is specially well

suited for high efficiency switch model power supplies, power factor

correction and half bridge and full bridge resonant topology line a

electronic lamp ballast.

IPAK

Absolute Maximum Ratings

Symbol

Parameter

Value

400

5.5

Units

V^DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

2.9

IDM

VGS

E^AS

(Note1)

Gate to Source Voltage

±30

330

7.4

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

V/ns

E^AR

dv/dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

0.38

-55~150

300

W/℃

℃

T^J,T^stg

T^L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

2.6

RQJC

R^QJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

℃/W

110

*When mounted on the minimum pad size recommended(PCB Mount)

Rev.A Nov.2010

12 3 4 5 6 7

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