Datasheet > WFW13N50

WFW13N50

更新时间： 2022-09-11 11:13:36

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
7页	564K
描述
Silicon N-Channel MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WFW13N50 数据手册

WFW13N50

Silicon N-Channel MOSFET

Features

■ 13A,500V, R_DS(on)(Max0.46Ω)@V_GS=10V

■

Ultra-low Gate charge(Typical 43nC)

Fast Switching Capability

■

100%Avalanche Tested

Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi's advancedplanar

stripe,DMOS technology.This latest technology has beenespecially

designed to minimize on-state resistance, have a high rugged

avalanche characteristics .This devices is specially wellsuited for

high efficiencyswitch model power supplies, power factor correction

and half bridge and full bridge resonant topology line a electronic

lamp ballast.

Absolute Maximum Ratings

Symbol

Parameter

Value

500

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

845

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

V/ ns

E_AR

dv/dt

3.5

218

1.56

-55~150

300

P_D

W/℃

℃

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

0.58

R_QJC

R_QCS

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

0.5

℃/W

Thermal Resistance , Junction-to -Ambient

62.5

℃

Rev.A Jun.2011

12 3 4 5 6 7

下载PDF

与WFW13N50相关器件

型号	品牌	描述	获取价格	数据表
WFW18N50	WINSEMI	Silicon N-Channel MOSFET	获取价格
WFW18N50N	WINSEMI	Silicon N-Channel MOSFET	获取价格
WFW18N50W	WINSEMI	Silicon N-Channel MOSFET	获取价格
WFW20N60W	WINSEMI	Silicon N-Channel MOSFET	获取价格
WFW24N50N	WINSEMI	Silicon N-Channel MOSFET	获取价格
WFW24N50W	WINSEMI	Silicon N-Channel MOSFET	获取价格