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WFP75N08 PDF预览

WFP75N08

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
威德姆 - WISDOM /
页数 文件大小 规格书
7页 758K
描述
N-Channel MOSFET

WFP75N08 数据手册

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WFP75N08  
Electrical Characteristics ( TC = 25 °C unless otherwise noted )  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
VGS = 0V, ID = 250uA  
ID = 250uA, referenced to 25 °C  
Drain-Source Breakdown Voltage  
80  
-
-
-
-
V
Δ BVDSS  
/
Breakdown Voltage Temperature  
coefficient  
0.08  
V/°C  
Δ TJ  
V
DS = 80V, VGS = 0V  
VDS = 64V, TC = 125 °C  
GS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
-
-
-
-
-
-
-
-
10  
uA  
uA  
nA  
nA  
IDSS  
Drain-Source Leakage Current  
100  
100  
-100  
V
Gate-Source Leakage, Forward  
Gate-source Leakage, Reverse  
IGSS  
On Characteristics  
VGS(th)  
V
V
DS = VGS, ID = 250uA  
GS =10 V, ID = 37.5A  
Gate Threshold Voltage  
2.0  
-
-
4.0  
V
Static Drain-Source On-state Resis-  
tance  
RDS(ON)  
0.012  
0.015  
Dynamic Characteristics  
Ciss  
Input Capacitance  
-
-
-
2600  
940  
3380  
1220  
275  
pF  
Coss  
Crss  
Output Capacitance  
VGS =0 V, VDS =25V, f = 1MHz  
Reverse Transfer Capacitance  
210  
Dynamic Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-on Delay Time  
Rise Time  
-
-
-
-
-
-
30  
225  
165  
155  
80  
70  
460  
340  
320  
105  
-
V
DD =40V, ID =75A, RG =25Ω  
(Note 4, 5)  
ns  
Turn-off Delay Time  
Fall Time  
Qg  
Total Gate Charge  
Gate-Source Charge  
VDS =64V, VGS =10V, ID =75A  
(Note 4, 5)  
Qgs  
15  
nC  
Qgd  
Gate-Drain Charge(Miller Charge)  
-
32  
-
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
75  
Unit.  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Integral Reverse p-n Junction  
Diode in the MOSFET  
-
-
-
-
-
-
A
ISM  
300  
1.5  
VSD  
IS =75A, VGS =0V  
V
trr  
Reverse Recovery Time  
-
-
90  
-
-
ns  
uC  
IS=75A, VGS=0V, dIF/dt=100A/us  
Qrr  
Reverse Recovery Charge  
250  
NOTES  
1. Repeativity rating : pulse width limited by junction temperature  
2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25, Starting TJ = 25°C  
3. ISD 75A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C  
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%  
5. Essentially independent of operating temperature.  
Copyright@Wisdom Semiconductor Inc., All rights reserved.  

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