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WED3EG7232S202JD3ISG PDF预览

WED3EG7232S202JD3ISG

更新时间: 2024-10-01 05:10:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
12页 243K
描述
DDR DRAM Module, 32MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184

WED3EG7232S202JD3ISG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:184
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.61
访问模式:FOUR BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N184
JESD-609代码:e4内存密度:2415919104 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:184字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX72封装主体材料:UNSPECIFIED
封装代码:DIMM封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Gold (Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

WED3EG7232S202JD3ISG 数据手册

 浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第2页浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第3页浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第4页浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第5页浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第6页浏览型号WED3EG7232S202JD3ISG的Datasheet PDF文件第7页 
WED3EG7232S-JD3  
White Electronic  
PRELIMINARY  
256MB – 32Mx72 DDR SDRAM UNBUFFERED  
FEATURES  
DESCRIPTION  
Double-data-rate architecture  
The WED3EG7232S is a 32Mx72 Double Data Rate  
SDRAM memory module based on 256Mb DDR SDRAM  
components. The module consists of nine 32Mx8 DDR  
SDRAMs in 66 pin TSOP packages mounted on a 184  
pin FR4 substrate.  
DDR200, DDR266, DDR333 amd DDR400  
• JEDEC design specications  
Bi-directional data strobes (DQS)  
Differential clock inputs (CK & CK#)  
Programmable Read Latency 2, 2.5 (clock)  
Programmable Burst Length (2, 4, 8)  
Programmable Burst type (sequential & interleave)  
Edge aligned data output, center aligned data input.  
Auto and self refresh  
Synchronous design allows precise cycle control with the  
use of system clock. Data I/O transactions are possible on  
both edges and Burst Lengths allow the same device to be  
useful for a variety of high bandwidth, high performance  
memory system applications.  
* This product is under development, is not qualied or characterized and is subject to  
change without notice.  
Serial presence detect  
Power supply:  
• VCC = VCCQ = +2.5V ± 0.2V (100, 133 and  
166MHz)  
• VCC = VCCQ = +2.6V ± 0.1V (200MHz)  
JEDEC 184 pin DIMM package  
• JD3 PCB height: 30.48 (1.20") Max  
NOTE: Consult factory for availability of:  
• RoHS compliant products  
• Vendor source control options  
• Industrial temperature option  
OPERATING FREQUENCIES  
DDR400 @CL=3  
DDR333 @CL=2.5  
166MHz  
DDR266 @CL=2  
133MHz  
DDR266 @CL=2.5  
133MHz  
DDR200 @CL=2  
100MHz  
Clock Speed  
CL-tRCD-tRP  
200MHz  
3-3-3  
2.5-3-3  
2-2-2  
2.5-3-3  
2-2-2  
June 2006  
Rev. 6  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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