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WCR03-12WM PDF预览

WCR03-12WM

更新时间: 2024-04-09 18:58:33
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 574K
描述
Planar passivated SCR with sensitive gate in surface mountable plastic package and through-hole package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

WCR03-12WM 数据手册

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WeEn Semiconductors  
WCR03 Series  
SCR  
5. Characteristics  
Table 2. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Values  
Unit  
VDRM  
VRRM  
IT(AV)  
repetitive peak off-state  
voltage  
RGK = 1 kΩ; Tj(init) = 25 °C  
1250  
V
repetitive peak reverse  
voltage  
RGK = 1 kΩ; Tj(init) = 25 °C  
1250  
0.8  
V
average on-state current half sine wave  
Tlead ≤ 83 °C  
TO92  
A
T ≤ 110 °C  
SOT223  
TO92  
c
IT(RMS)  
RMS on-state current  
half sine wave  
Tlead ≤ 83 °C  
1.25  
A
T ≤ 110 °C  
c
SOT223  
ITSM  
non-repetitive peak on-  
state current  
half sine wave; Tj(init) = 25 °C; tp = 10 ms  
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms  
tp = 10 ms; sine-wave pulse  
IG = 0.2 mA  
20  
22  
2
A
A
I2t  
I2t for fusing  
A2s  
dIT/dt  
rate of rise of on-state  
current  
100  
A/μs  
IGM  
peak gate current  
peak gate power  
1.2  
2
A
W
W
°C  
°C  
PGM  
PG(AV)  
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
0.2  
T
stg  
-40 to 150  
-40 to 125  
Tj  
Table 3. Electrical Characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
IGT  
gate trigger current  
gate trigger voltage  
VD = 12 V; RL = 100 Ω; Tj = 25 °C  
VD = 12 V; RL = 100 Ω; Tj = 25 °C  
VD = 800 V; IT = 0.1 A;Tj = 125 °C  
IRG = 2 mA  
10  
-
90  
0.8  
-
μA  
V
VGT  
-
0.6  
0.25  
0.4  
V
VRG  
IL  
gate reverse voltage  
latching current  
holding current  
on-state voltage  
off-state current  
reverse current  
10  
-
-
-
-
-
-
-
-
V
IT = 0.1 A; RGK = 1 kΩ; Tj = 25 °C  
VD = 12 V; RGK = 1 kΩ; Tj = 25 °C  
IT = 1.25 A; Tj = 25 °C  
6
mA  
mA  
V
IH  
-
5
VT  
ID  
-
1.3  
1
Tj = 25 °C  
-
μA  
μA  
VD = VDRM / VRRM; RGK = 1 kΩ  
IR  
Tj = 125 °C  
-
100  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state  
voltage  
VDM = 838 V; Tj = 125 °C; RGK = 1 kΩ;  
(VDM = 67% of VDRM); exponential waveform  
200  
-
-
V/μs  
©
WCR03 Series  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2021. All rights reserved  
Product data sheet  
29 November 2021  
2 / 12  

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