WeEn Semiconductors
WCR03 Series
SCR
5. Characteristics
Table 2. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Values
Unit
VDRM
VRRM
IT(AV)
repetitive peak off-state
voltage
RGK = 1 kΩ; Tj(init) = 25 °C
1250
V
repetitive peak reverse
voltage
RGK = 1 kΩ; Tj(init) = 25 °C
1250
0.8
V
average on-state current half sine wave
Tlead ≤ 83 °C
TO92
A
T ≤ 110 °C
SOT223
TO92
c
IT(RMS)
RMS on-state current
half sine wave
Tlead ≤ 83 °C
1.25
A
T ≤ 110 °C
c
SOT223
ITSM
non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C; tp = 10 ms
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
tp = 10 ms; sine-wave pulse
IG = 0.2 mA
20
22
2
A
A
I2t
I2t for fusing
A2s
dIT/dt
rate of rise of on-state
current
100
A/μs
IGM
peak gate current
peak gate power
1.2
2
A
W
W
°C
°C
PGM
PG(AV)
average gate power
storage temperature
junction temperature
over any 20 ms period
0.2
T
stg
-40 to 150
-40 to 125
Tj
Table 3. Electrical Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
gate trigger voltage
VD = 12 V; RL = 100 Ω; Tj = 25 °C
VD = 12 V; RL = 100 Ω; Tj = 25 °C
VD = 800 V; IT = 0.1 A;Tj = 125 °C
IRG = 2 mA
10
-
90
0.8
-
μA
V
VGT
-
0.6
0.25
0.4
V
VRG
IL
gate reverse voltage
latching current
holding current
on-state voltage
off-state current
reverse current
10
-
-
-
-
-
-
-
-
V
IT = 0.1 A; RGK = 1 kΩ; Tj = 25 °C
VD = 12 V; RGK = 1 kΩ; Tj = 25 °C
IT = 1.25 A; Tj = 25 °C
6
mA
mA
V
IH
-
5
VT
ID
-
1.3
1
Tj = 25 °C
-
μA
μA
VD = VDRM / VRRM; RGK = 1 kΩ
IR
Tj = 125 °C
-
100
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 838 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential waveform
200
-
-
V/μs
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WCR03 Series
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WeEn Semiconductors Co., Ltd. 2021. All rights reserved
Product data sheet
29 November 2021
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