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VSC7709WA

更新时间： 2024-01-11 02:19:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 通信ATM异步传输模式光纤
页数 文件大小 规格书
10页 145K
描述
Photodiode Detector, 1270nm Min, 1355nm Max, 1250Mbps, TO-46, Panel Mount, FLAT WINDOW, TO-46, 4 PIN

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VSC7709WA 技术参数

生命周期：Contact Manufacturer包装说明：TO-46
Reach Compliance Code：compliant风险等级：5.26
主体高度：2.4 mm主体长度或直径：4.7 mm
通信标准：ATM, SDH, SONET数据速率：1250 Mbps
光纤设备类型：PHOTODIODE DETECTOR安装特点：PANEL MOUNT
最高工作温度：85 °C最低工作温度：
最大工作波长：1355 nm最小工作波长：1270 nm
标称工作波长：1300 nm封装形式：TO-46
响应度：2.5 A/W最大供电电压：3.6 V
最小供电电压：3 V标称供电电压：3.3 V
表面贴装：NO传输类型：DIGITAL
Base Number Matches：1

VSC7709WA 数据手册

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VITESSE  
SEMICONDUCTOR CORPORATION  
Advance Product Information  
1.25Gb/s Photodetector/Transimpedance  
Amplifier for Optical Communication  
VSC7709  
Electrical Characteristics  
Table 1: Electro-Optic Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
Conditions  
λ
Wavelength  
1270  
3.0  
1355  
3.6  
nm  
V
VDD  
IS  
Power Supply Voltage  
Power Supply Current  
30  
mA  
f = 0.3MHz to 40MHz. Hybrid  
differential with external filter.  
PSRR  
BW  
fC  
Power Supply Rejection Ratio  
Optical Modulation Bandwidth  
Low Frequency Cutoff  
TBD  
dB  
See Measurements and  
Applications section  
1000  
2
MHz  
MHz  
See Measurements and  
Applications section  
RD  
TZ  
Differential Responsivity  
Differential Transimpedance  
Single-Ended Output Impedance  
Output Noise Voltage  
2.5  
2000  
25  
mV/µW  
Ω
Ω
RL = 100Ω(1)  
RL = 100Ω(2)  
RO  
VN  
NEPO  
S
1.2  
mV rms BW = 800MHz, P = 0mW  
Input Noise Equivalent Optical Power  
Sensitivity  
0.5  
-26  
µW rms BW = 800MHz, P = 0mW  
dBm  
mV  
V
BER 10-12, B = 1250Mb/s(3)  
∆V  
VD  
Bias Offset Voltage  
200  
P = -3dBm  
Differential Output Voltage  
0.25  
P = -3dBm, R = 100Ω  
P = -3dBm, ±10% voltage  
window  
PDJ  
Pattern Dependent Jitter  
60  
5
ps  
DCD  
Duty Cycle Distortion  
Rise and Fall Times  
%
ps  
P = -3dBm  
TR /TF  
400  
20% to 80%, P = -3dBm  
NOTES: (1) Applicable to packaged parts with assembled 1300nm photodetector with responsivity = 0.8A/W. (2) Applicable to bare dice.  
(3) By characterization. See Measurements and Application section.  
Absolute Maximum Ratings(1)  
Power Supply Voltage (V )...........................................................................................................................+6V  
DD  
Maximum Junction Temperature Range......................................................................................-55°C to +125°C  
Storage Temperature Range.........................................................................................................-55°C to +125°C  
Incident Optical Power (P ).................................................................................................................... +3dBm  
INC  
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-  
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended  
periods may affect device reliability.  
Recommended Operating Conditions  
Positive Voltage Rail (V ).................................................................................................................. 3.0 to 3.6V  
DD  
Negative Voltage Rail (GND)............................................................................................................................ 0V  
Operating Temperature Range (T )...........................................................................0°C Ambient to +85°C Case  
A
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012  
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  
Page 2  
G52362-0, Rev 2.1  
04/02/01  
1234567...10

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