Datasheet > VS-U5FH150FA60

VS-U5FH150FA60

更新时间： 2023-12-06 20:10:42

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	156K
描述
FRED Pt? Gen 5 Ultrafast Rectifier Diode Module, 600 V, 150 A

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VS-U5FH150FA60 数据手册

VS-U5FH150FA60

Vishay Semiconductors

www.vishay.com

FRED Pt^®Gen 5

Ultrafast Rectifier Diode, 600 V, 150 A

FEATURES

• Ultrafast and optimized Q_rr

• Best in class forward voltage drop and switching

losses trade off

• Optimized for high speed operation

• 175 °C maximum operating junction temperature

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• UL approved file E78996

SOT-227

PRIMARY CHARACTERISTICS

V_R

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

600 V

1.34 V

70 ns

150 A

V_F(typical) at 75 A, per diode

t_rr(typical) at 75 A, per diode

_F(DC)per module at T_C= 117 °C

DESCRIPTION / APPLICATIONS

Featuring a unique combination of low conduction and

switching losses, the VS-U5FH150FA60 is the right choice

for high frequency converters, both soft switched / resonant.

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

Type

Modules - diode, FRED Pt^®

Package

SOT-227

Two separate diodes,

parallel pin-out

Circuit configuration

These modules are specifically designed to improve

efficiency of PFC and output rectification stages of EV / HEV

battery charging stations, booster stage of solar inverters,

and UPS applications, these devices are perfectly matched

to operate with MOSFETs or high speed IGBTs.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

T_C= 117 °C

MAX.

600

UNITS

Cathode to anode voltage

Continuous forward current per diode

Single pulse forward current per diode

Maximum power dissipation per module

RMS isolation voltage

I_F

I_FSM

T_J= 25 °C

575

P_D

T_C= 117 °C

215

V_ISOL

T_J, T_Stg

Any terminal to case, t = 1 min

2500

Operating junction and storage temperature range

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode breakdown voltage

V_BR

I_R= 100 μA

600

1.7

I_F= 75 A

1.34

1.12

0.2

Forward voltage

V_FM

I_F= 75 A, T_J= 150 °C

V_R= 600 V

Reverse leakage current

I_RM

T_J= 125 °C, V_R= 600 V

T_J= 150 °C, V_R= 600 V

μA

139

Revision: 19-May-2022

Document Number: 96941

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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