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VS-UFB250FA60

更新时间： 2024-11-11 20:10:51
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网测试光电二极管
页数 文件大小 规格书
7页 143K
描述
DIODE 100 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT PACKAGE-4, Rectifier Diode

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VS-UFB250FA60 技术参数

生命周期：Active包装说明：R-PUFM-X4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：2.14其他特性：PD-CASE
应用：ULTRA FAST SOFT RECOVERY外壳连接：ISOLATED
配置：SEPARATE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.02 V
JESD-30 代码：R-PUFM-X4最大非重复峰值正向电流：1300 A
元件数量：2相数：1
端子数量：4最高工作温度：175 °C
最低工作温度：-55 °C最大输出电流：100 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：395 W最大重复峰值反向电压：600 V
最大反向电流：4000 µA最大反向恢复时间：0.166 µs
反向测试电压：600 V子类别：Other Diodes
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-UFB250FA60 数据手册

 浏览型号VS-UFB250FA60的Datasheet PDF文件第2页浏览型号VS-UFB250FA60的Datasheet PDF文件第3页浏览型号VS-UFB250FA60的Datasheet PDF文件第4页浏览型号VS-UFB250FA60的Datasheet PDF文件第5页浏览型号VS-UFB250FA60的Datasheet PDF文件第6页浏览型号VS-UFB250FA60的Datasheet PDF文件第7页 
VS-UFB250FA60  
Vishay Semiconductors  
www.vishay.com  
Insulated Ultrafast Rectifier Module, 250 A  
FEATURES  
• Two fully independent diodes  
• Fully insulated package  
• Ultrafast, soft reverse recovery, with high  
operation junction temperature (TJ max. = 175 °C)  
• Very low forward voltage drop  
• Optimized for power conversion: welding and industrial  
SMPS applications  
• Easy to use and parallel  
• Industry standard outline  
• UL approved file E78996  
SOT-227  
• Designed and qualified for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
The VS-UFB250FA60 insulated modules integrate two state  
of the art ultrafast recovery rectifiers in the compact,  
industry standard SOT-227 package. The diodes structure,  
and its life time control, provide an ultrasoft recovery  
current shape, together with the best overall performance,  
ruggedness and reliability characteristics.  
PRIMARY CHARACTERISTICS  
VR  
600 V  
250 A  
166 ns  
IF(AV) (1) per module at TC = 113 °C  
trr  
Type  
Modules - Diode FRED Pt®  
SOT-227  
These devices are thus intended for high frequency  
applications in which the switching energy is designed not  
to be predominant portion of the total energy, such as in the  
output rectification stage of welding machines, SMPS,  
DC/DC converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
Package  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
VR  
V
(1)  
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
TC = 90 °C  
168  
A
IFSM  
PD  
TC = 25 °C  
1300  
TC = 90 °C  
395  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 minute  
2500  
Operating junction and storage temperatures  
-55 to +175  
°C  
Note  
(1)  
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.  
Revision: 26-Sep-17  
Document Number: 93626  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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