VS-U5FH240FA120
Vishay Semiconductors
www.vishay.com
FRED Pt® Gen 5
Ultrafast Rectifier Diode, 1200 V, 240 A
FEATURES
• Ultrafast and optimized Qrr
• Best in class forward voltage drop and switching
losses trade off
• Optimized for high speed operation
• 175 °C maximum operating junction temperature
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
PRIMARY CHARACTERISTICS
VR
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1200 V
VF (typical) at 120 A, per diode
trr (typical) at 120 A, per diode
1.99 V
98 ns
DESCRIPTION / APPLICATIONS
I
F(DC) per module at TC = 75 °C
240 A
Featuring a unique combination of low conduction and
switching losses, the VS-U5FH240FA120 is the right choice
for high frequency converters, both soft switched / resonant.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
Type
Modules - diode FRED Pt®
Package
SOT-227
Two separate diodes,
parallel pin-out
Circuit configuration
These modules are specifically designed to improve
efficiency of PFC and output rectification stages of EV / HEV
battery charging stations, booster stage of solar inverters,
and UPS applications, these devices are perfectly matched
to operate with MOSFETs or high speed IGBTs.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
1200
UNITS
Cathode to anode voltage
V
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
IF
TC = 75 °C
TJ = 25 °C
TC = 75 °C
120
A
IFSM
665
PD
526
W
V
VISOL
TJ, TStg
Any terminal to case, t = 1 min
2500
Operating junction and storage temperature range
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNITS
Cathode to anode breakdown voltage
VBR
IR = 200 μA
1200
-
2.5
-
IF = 120 A
-
-
-
-
-
1.99
1.74
0.9
V
Forward voltage
VFM
IF = 120 A, TJ = 150 °C
VR = 1200 V
160
-
Reverse leakage current
IRM
TJ = 125 °C, VR = 1200 V
TJ = 150 °C, VR = 1200 V
228
684
μA
-
Revision: 19-May-2022
Document Number: 96896
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000