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VS-90SQ035TR-M3 PDF预览

VS-90SQ035TR-M3

更新时间: 2024-01-27 18:02:10
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 131K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-90SQ035TR-M3 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.57 VJEDEC-95代码:DO-204AR
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:2150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:9 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:35 V
最大反向电流:1750 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

VS-90SQ035TR-M3 数据手册

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VS-90SQ... Series, VS-90SQ...-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 9 A  
FEATURES  
• 150 °C TJ operation  
• Low forward voltage drop  
Cathode  
Anode  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
DO-204AR  
• Guard ring for enhanced ruggedness and  
long term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-204AR  
9 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
30 V, 35 V, 40 V, 45 V  
0.42 V  
VF at IF  
DESCRIPTION  
I
RM max.  
70 mA at 125 °C  
150 °C  
The VS-90SQ... axial leaded Schottky rectifier series has  
been optimized for very low forward voltage drop, with  
moderate leakage. The proprietary barrier technology allows  
for reliable operation up to 150 °C junction temperature.  
Typical applications are in switching power supplies,  
converters, freewheeling diodes, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
12 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
9
UNITS  
A
V
30 to 45  
2150  
tp = 5 μs sine  
A
VF  
9 Apk, TJ = 125 °C  
Range  
0.42  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
VS-90SQ030  
VS-90SQ035  
VS-90SQ040  
VS-90SQ045  
PARAMETER  
SYMBOL  
UNITS  
VS-90SQ030-M3 VS-90SQ035-M3 VS-90SQ040-M3 VS-90SQ045-M3  
Maximum DC reverse voltage  
VR  
30  
35  
40  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 69 °C, rectangular waveform  
9
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
2150  
Followinganyratedload  
condition and with rated  
IFSM  
VRRM applied  
10 ms sine or 6 ms rect. pulse  
340  
12  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.8 A, L = 7.4 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.8  
Revision: 19-Sep-11  
Document Number: 93417  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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