Datasheet > VS-45LR20

VS-45LR20

更新时间： 2024-01-05 22:30:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	191K
描述
DIODE GEN PURP 200V 150A DO205AC

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中文翻译

获取价格

数据手册

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VS-45LR20 数据手册

VS-45L(R), VS-150K(R), VS-150KS(R) Series

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Vishay Semiconductors

FORWARD CONDUCTION

PARAMETER

SYMBOL

I_F(AV)

TEST CONDITIONS

180° conduction, half sine wave

DC at 142 °C case temperature

VALUES

150

UNITS

Maximum average forward current 

at case temperature

150

°C

Maximum RMS forward current

I_F(RMS)

235

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

3570

3740

3000

3140

No voltage 

reapplied

Maximum peak, one cycle forward,

non-repetitive surge current

I_FSM

100 % V_RRM

reapplied



Sinusoidal half wave,

initial T_J= T_Jmaximum

No voltage 

reapplied

Maximum I²t for fusing

I²t

kA²s

100 % V_RRM

reapplied



Maximum I²t for fusing

I²t

t = 0.1 to 10 ms, no voltage reapplied

(16.7 % x  x I_F(AV)< I <  x I_F(AV)), T_J= T_Jmaximum

(I >  x I_F(AV)), T_J= T_Jmaximum

640

kA²s

Low level value of threshold voltage

High level value of threshold voltage

V_F(TO)1

V_F(TO)2

0.67

0.83

Low level value of forward

slope resistance

r_f1

(16.7 % x  x I_F(AV)< I <  x I_F(AV)), T_J= T_Jmaximum

1.42

High level value of forward

r_f2

(I >  x I_F(AV)), T_J= T_Jmaximum

0.91

1.33

slope resistance

Maximum forward voltage drop

V_FM

I_pk= 471 A, T_J= 25 °C, t_p= 10 ms sinusoidal wave

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction operating

and storage temperature range

T_J, T_Stg

-40 to 200

°C

Maximum thermal resistance,

R_thJC

R_thCS

DC operation

0.25

0.10

junction to case

K/W

Maximum thermal resistance,

case to heatsink

Mounting surface, smooth, flat and greased

Not lubricated threads

minimum

14.1 (125)

17.0 (150)

12.2 (108)

15.0 (132)

11.3 (100)

14.1 (125)

9.5 (85)

maximum

minimum

maximum

minimum

maximum

minimum

maximum

Mounting torque

N · m

(lbf · in)

45L

Lubricated threads

Not lubricated threads

Lubricated threads

Mounting torque

150K

150KS

N · m

(lbf · in)

12.5 (110)

100

Approximate weight

Case style

3.5

oz.

45L

DO-30 (DO-205AC)

DO-8 (DO-205AA)

B-42

150K-A

150KS

See dimensions - link at the end of datasheet

R_thJCCONDUCTION

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

120°

90°

0.031

0.038

0.048

0.071

0.120

0.023

0.040

0.053

0.075

0.121

T_J= T_Jmaximum

K/W

60°

30°

Note

•

The table above shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

Revision: 11-Jan-18

Document Number: 93489

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

123 4 5 6 7...9

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与VS-45LR20相关器件

型号	品牌	获取价格	描述	数据表
VS-45LR40	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 400V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN
VS-45LR60	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN
VS46417801CTG-10	ETC	获取价格	x64 SDRAM Module
VS46417801CTG-8H	ETC	获取价格	x64 SDRAM Module
VS46417801CTG-8L	ETC	获取价格	x64 SDRAM Module
VS46417801CTS-10	ETC	获取价格	x64 SDRAM Module
VS46417801CTS-8H	ETC	获取价格	x64 SDRAM Module
VS46417801CTS-8L	ETC	获取价格	x64 SDRAM Module
VS-47CTQ020-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20V V(RRM), Silicon, TO-262AA,
VS-47CTQ020-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 20V V(RRM), Silicon, TO-262AA, HALOGEN

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