VESD01A2-03G to VESD33A2-03G
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD26A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
26
26
-
-
-
V
Reverse current
at VR = 26 V
IR
< 0.01
29.1
43
0.1
30.6
48
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
27.6
-
at IPP = IPPM = 2.1 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.3
1.9
17.5
1.2
1.42
-
V
Forward clamping voltage
at IPP = IPPM = 2.1 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
14
21
pF
ELECTRICAL CHARACTERISTICS VESD33A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
33
33
-
-
-
V
Reverse current
at VR = 33 V
IR
< 0.01
37.4
56
0.1
39.3
62.5
1.2
1.32
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
35.5
-
at IPP = IPPM = 1.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.22
3.6
15
V
Forward clamping voltage
at IPP = IPPM = 1.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
12
18
pF
Rev. 1.3, 05-Oct-2022
Document Number: 86150
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000