Datasheet > V41103C

V41103C

更新时间： 2023-12-06 20:03:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	142K
描述
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

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V41103C 数据手册

V41103C

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

10000

1000

100

1000

100

10000

1000

100

T_C= 124.5 ƱC, R_thJC= 1.0 ƱC/W

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

0.1

0.01

0.001

0.0001

0.00001

T_J= -40 ƱC

100 125 150 175

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve

Fig. 4 - Typical Reverse Characteristics Per Diode

Axis Title

16.0

12.0

8.0

4.0

10000

1000

100

10 000

10000

T_J= 25 °C,

D = 0.8

D = 0.5

f = 1.0 MHz,

V_sig= 50 mV_p-p

D = 0.3

1000

100

D = 1.0

D = 0.2

1000

100

D = 0.1

D = t_p/T

t_p

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance

Axis Title

100

10000

1000

100

10000

1000

100

Junction to case

T_J= 150 ƱC

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 ƱC

0.1

0.01

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Instantaneous Forward Voltage (V)

0.1

100

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

Revision: 22-Dec-2020

Document Number: 98159

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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