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V23990-P861-F49-PM PDF预览

V23990-P861-F49-PM

更新时间: 2023-09-03 20:40:30
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VINCOTECH /
页数 文件大小 规格书
18页 7256K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

V23990-P861-F49-PM 数据手册

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V23990-P861-F49-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,00015 25  
5
5,8  
6,5  
V
V
25  
10  
1,1  
1,5  
1,8  
1,9(1)  
15  
0
150  
600  
0
25  
25  
0,6  
µA  
nA  
Ω
20  
300  
None  
551  
40  
Cies  
pF  
pF  
pF  
Coes  
Cres  
Output capacitance  
f = 1 Mhz  
0
25  
25  
Reverse transfer capacitance  
17  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
2,15  
K/W  
25  
73,6  
73,2  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
150  
25  
11,6  
tr  
150  
25  
17,2  
Rgon = 32 Ω  
Rgoff = 32 Ω  
109,4  
129,4  
100,24  
118,41  
0,156  
0,212  
0,231  
0,303  
td(off)  
Turn-off delay time  
Fall time  
ns  
150  
25  
±15  
300  
10  
tf  
ns  
150  
25  
QrFWD=0,485 µC  
QrFWD=0,905 µC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
150  
25  
150  
Copyright Vincotech  
3
10 Sep. 2021 / Revision 4  

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