Datasheet > V20PW22C

V20PW22C

更新时间： 2023-12-06 20:10:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	135K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.62 V at IF = 5 A

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V20PW22C 数据手册

V20PW22C

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

R_thJM= 1.8 °C/W

T_Mmeasured at cathode

terminal mount typical values

0.1

T_J= 100 °C

T_J= 150 °C

T_J= 175 °C

0.01

T_J= 125 °C

0.001

0.0001

0.00001

0.000001

T_J= 25 °C

T_J= -40 °C

R_thJA= 65 °C/W

100 125 150 175

100

Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics

Axis Title

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

10000

1000

10000

D = 0.8

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

D = 0.5

D = 0.3

D = 0.2

1000

100

1000

100

D = 1.0

100

D = 0.1

D = t_p/T

t_p

0.1

100

1000

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

100

10000

1000

100

10000

1000

100

Junction to Ambient

T_J= 175 °C

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

Instantaneous Forward Voltage (V)

0.1

100

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 19-Apr-2023

Document Number: 87005

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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