Datasheet > UTV200

UTV200

更新时间： 2024-01-31 22:13:13

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网放大器晶体管
页数	文件大小	规格书
3页	318K
描述
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 55JV, 4 PIN

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UTV200 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	FLANGE MOUNT, R-CDFM-F4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.11
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
最大集电极电流 (IC)：	4.5 A	基于收集器的最大容量：	36 pF
集电极-发射极最大电压：	28 V	配置：	COMMON EMITTER, 2 ELEMENTS
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-CDFM-F4
JESD-609代码：	e0	元件数量：	2
端子数量：	4	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

UTV200 数据手册

UTV200

20 Watts, 26.5 Volts, Class A

UHF Television - Band IV & V

GENERAL DESCRIPTION

CASE OUTLINE

The UTV 200 is a COMMON EMITTER transistor capable of providing 20

Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The

transistor includes double input prematching for full broadband capability.

Gold Metalization and Diffused Ballasting are used to provide high reliability

and supreme ruggedness.

55JV, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

80 Watts

Maximum Voltage and Current

BVces

BVceo

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

28 Volts

4.0 Volts

4.5 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out - Pk Sync

Power Input

Power Gain

Intermodulation Distortion

Load Mismatch Tolerance

F = 470 - 860 MHz

Vcc = 26.5 Volts

Ic = 2.7 Amps

Pref = 20Watts

F = 860 MHz

Watts

Pout

2.8

-46

8.5

9.5

-48

IMD¹

VSWR₁

3:1

LVceo²

BVces²

BVebo²

Collector to Emitter Breakdown Ic = 40 mA

Volts

Collector to Base Breakdown

Emitter to Base Breakdown

Current Gain

Ic = 20mA

Ie = 10 mA

Vce = 5 V, 1 A

Vcb = 26 V, F = 1 MHz

Tc = 25^oC

h_FE

150

1.2

Cob²

Output Capacitance

Thermal Resistance

^oC/W

Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz

European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB

Note 2: Per side

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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