Datasheet > UTT6675

UTT6675

更新时间： 2023-12-06 20:01:59

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UTT6675 数据手册

UTT6675

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_A=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

±20

Continuous

-11

Pulsed (Note 2)

I_DM

-50

Avalanche Energy, Single Pulsed (Note 3)

Peak Diode Recovery dv/dt (Note4)

Power Dissipation

E_AS

V/ns

dv/dt

P_D

4.5

2.5

Junction Temperature

T_J

+150

-55 ~ +150

°C

Storage Temperature Range

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=1.5mH, I_AS=-11A, V_DD=-25V, R_G=25 Ω, Starting T_J=25°C

4. I_SD≤ -11A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J=25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JC

Note: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSSV_GS=0V, I_D=-250µA

-30

I_DSS

V_DS=-30V, V_GS=0V

V_DS=0V ,V_GS=+20V

V_DS=0V ,V_GS=-20V

-1

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=-250µA

-1.0

-3.0

V_GS=-10V, I_D=-11A

R_DS(ON)

mΩ

Drain-Source On-State Resistance

V_GS=-4.5V, I_D=-9.0A

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

1620

300

_DS=-15V, V_GS=0V, f=1.0MHz

_DS=-15V, V_GS=-5V, I_D=-11A

Output Capacitance

C_OSS

C_RSS

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Turn-on Delay Time (Note 1)

Rise Time

200

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

18.4

5.4

I_G=-1mA (Note 1, 2)

V_DD=-15V, V_GS=-10V, I_D=-1A,

R_G=6Ω (Note 1, 2)

Turn-off Delay Time

t_D(OFF)

t_F

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

Maximum Body-Diode Continuous Current

Reverse Recovery Time

I_S

I_SM

V_SD

t_rr

-11

-50

-1.2

I_S=-11A, V_GS=0V

V_GS=0V, I_S=-11A

dI_F/dt=100A/μs

160

270

Reverse Recovery Charge

Q_rr

Note: 1. Pulse Test : Pulse width ≤ -300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R502-B59.A

www.unisonic.com.tw

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