5秒后页面跳转
UT70N03G-TN3-T PDF预览

UT70N03G-TN3-T

更新时间: 2024-02-19 17:47:16
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
3页 146K
描述
N-CHANNEL ENHANCEMENT MODE

UT70N03G-TN3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.68配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):195 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UT70N03G-TN3-T 数据手册

 浏览型号UT70N03G-TN3-T的Datasheet PDF文件第2页浏览型号UT70N03G-TN3-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UT70N03  
Preliminary  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE  
„
DESCRIPTION  
The UT70N03 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in PWM  
applications.  
„
FEATURES  
* RDS(ON)< 9m@ VGS=10V, ID=33A  
* RDS(ON)< 18m@ VGS=4.5V, ID=20A  
* Low capacitance  
* Low gate charge  
* Fast switching capability  
* Avalanche energy specified  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
UT70N03L-TM3-T  
UT70N03L-TN3-T  
UT70N03L-TN3-R  
UT70N03G-TM3-T  
UT70N03G-TN3-T  
UT70N03G-TN3-R  
TO-251  
TO-252  
TO-252  
G
G
G
Tube  
Tube  
Tape Reel  
www.unisonic.com.tw  
1 of 5  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-269.c  

与UT70N03G-TN3-T相关器件

型号 品牌 获取价格 描述 数据表
UT70N03L-TM3-T UTC

获取价格

N-CHANNEL ENHANCEMENT MODE
UT70N03L-TN3-R UTC

获取价格

N-CHANNEL ENHANCEMENT MODE
UT70N03L-TN3-T UTC

获取价格

N-CHANNEL ENHANCEMENT MODE
UT70N03-TN3-R UTC

获取价格

Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
UT70N03-TN3-T UTC

获取价格

Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
UT70P02 UTC

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT70P02L-TN3-R UTC

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT70P02L-TN3-T UTC

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT70P02-TN3-R UTC

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT70P02-TN3-T UTC

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET