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UT70N03-TN3-T PDF预览

UT70N03-TN3-T

更新时间: 2024-02-24 11:39:00
品牌 Logo 应用领域
友顺 - UTC 开关脉冲晶体管
页数 文件大小 规格书
3页 145K
描述
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

UT70N03-TN3-T 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):195 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UT70N03-TN3-T 数据手册

 浏览型号UT70N03-TN3-T的Datasheet PDF文件第2页浏览型号UT70N03-TN3-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UT70N03  
Preliminary  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE  
„
DESCRIPTION  
The UT70N03 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in PWM  
applications.  
„
FEATURES  
* RDS(ON)< 9m@ VGS=10V, ID=33A  
* RDS(ON)< 18m@ VGS=4.5V, ID=20A  
* Low capacitance  
* Low gate charge  
* Fast switching capability  
* Avalanche energy specified  
Lead-free:  
UT70N03L  
Halogen-free: UT70N03G  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
1
G
G
2
D
D
3
S
S
UT70N03-TN3-R  
UT70N03-TN3-T  
UT70N03L-TN3-R  
UT70N03L-TN3-T  
UT70N03G-TN3-R  
UT70N03G-TN3-T  
TO-252  
TO-252  
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-269.a  

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