Datasheet > 射频和微波 > 射频/微波开关> UPG2417T6M-E2

UPG2417T6M-E2

更新时间： 2024-01-04 00:45:20

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
13页	245K
描述
GaAs Integrated Circuit SP6T Switch for NFC Application

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技术参数
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UPG2417T6M-E2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	LCC12,.08SQ,20
Reach Compliance Code：	compliant	风险等级：	5.81
1dB压缩点：	32 dBm	其他特性：	HIGH ISOLATION
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	35 dBm	最大插入损耗：	40 dB
最小隔离度：	32 dB	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	12
最高工作温度：	85 °C	最低工作温度：	-45 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC12,.08SQ,20
电源：	3 V	射频/微波设备类型：	DIVERSITY SWITCH
子类别：	RF/Microwave Switches	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

UPG2417T6M-E2 数据手册

PreliminaryData Sheet

μPG2417T6M

R09DS0010EJ0100

Rev.1.00

GaAs Integrated Circuit

Dec 24, 2010

SP6T Switch for NFC Application

DESCRIPTION

The μPG2417T6M is a GaAs MMIC for SP6T (Single Pole Six Throw) switch for NFC (Near Field Communication)

application.

This device is housed in a 12-pin plastic TSQFN (Thin Small Quad Flat Non-leaded) (T6M) package and is suitable for

high-density surface mounting.

FEATURES

•

1, 2, 4, 8 pF capacitors on RF path are built in PKG.

Switch control voltage

: V_{cont (H)}= 2.85 V TYP.

: V_{cont (L)}= 0 V TYP.

•

Low insertion loss

High isolation

Handling power

: L_ins= 0.5 dB TYP. @ f = 13.56 MHz

: ISL = 50 dB TYP. @ f = 13.56 MHz

: P_{in (0.1 dB)}= +32.0 dBm TYP. @ f = 13.56 MHz

High-density surface mounting : 12-pin plastic TSQFN (T6M) package (2.0 × 2.0 × 0.37 mm)

APPLICATIONS

•

NFC Application (FeliCa^TMetc.)

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

μPG2417T6M-E2 μPG2417T6M-E2-A 12-pin plastic TSQFN

2417

•

Embossed tape 8 mm wide

Pin 10, 11, 12 face the perforation

side of the tape

(T6M) (Pb-Free)

•

Qty 3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: μPG2417T6M

CAUTION

Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this

device. This device must be protected at all times from ESD. Static charges may easily produce potentials of

several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard

ESD precautions must be employed at all times.

R09DS0010EJ0100 Rev.1.00

Dec 24, 2010

Page 1 of 11

12 3 4 5 6 7...13

中文翻译

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与UPG2417T6M-E2相关器件

型号	品牌	获取价格	描述	数据表
UPG2417T6M-E2-A	RENESAS	获取价格	GaAs Integrated Circuit SP6T Switch for NFC Application
UPG2418T6X-A	RENESAS	获取价格	UPG2418T6X-A
UPG2418TB	RENESAS	获取价格	GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT S
UPG2418TB-E4	RENESAS	获取价格	GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT S
UPG2418TB-E4-A	RENESAS	获取价格	GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT S
UPG2419T6R	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 4.0 GHz to 5.0 GHz
UPG2419T6R-E2	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 4.0 GHz to 5.0 GHz
UPG2419T6R-E2-A	RENESAS	获取价格	GaAs Integrated Circuit SPDT Switch for 4.0 GHz to 5.0 GHz
UPG2422TK	CEL	获取价格	GaAs Integrated Circuit SPDT Switch for 0.05 GHz to 6.0 GHz
UPG2422TK_09	CEL	获取价格	SPDT Switch for 0.05 GHz to 6.0 GHz

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