Datasheet > UPD4616112-X

UPD4616112-X

更新时间： 2022-03-04 14:06:01

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
32页	211K
描述
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

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UPD4616112-X 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD4616112-X

16M-BIT CMOS MOBILE SPECIFIED RAM

1M-WORD BY 16-BIT

EXTENDED TEMPERATURE OPERATION

Description

The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile

specified RAM featuring low power static RAM compatible function and pin configuration.

The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell.

The µPD4616112-X is packed in 48-pin TAPE FBGA.

Features

• 1,048,576 words by 16 bits organization

• Fast access time: 85, 95 ns (MAX.)

• Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)

• Low voltage operation: V^CC= 2.6 to 3.1 V

• Operating ambient temperature: T^A= –25 to +85 °C

• Output Enable input for easy application

• Chip Enable input: /CS pin

• Standby Mode input: MODE pin

• Standby Mode1: Normal standby (Memory cell data hold valid)

• Standby Mode2: Memory cell data hold invalid

Product name

Access time

ns (MAX.)

Operating supply Operating ambient

Supply current

Voltage

temperature

°C

At operating

At standby

mA (MAX.)

µA (MAX.)

µPD4616112-BxxLX

85, 95

2.6 to 3.1

–25 to +85

70 / 10

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M15794EJ2V0DS00 (2nd edition)

Date Published January 2002 NS CP (K)

Printed in Japan

The mark ★ shows major revised points.

2001

12 3 4 5 6 7...32

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