5秒后页面跳转
UN6116R PDF预览

UN6116R

更新时间: 2024-01-10 11:27:24
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 229K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71

UN6116R 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UN6116R 数据手册

 浏览型号UN6116R的Datasheet PDF文件第2页浏览型号UN6116R的Datasheet PDF文件第3页浏览型号UN6116R的Datasheet PDF文件第4页浏览型号UN6116R的Datasheet PDF文件第5页浏览型号UN6116R的Datasheet PDF文件第6页浏览型号UN6116R的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR6111/6112/6113/6114/6115/6116/6117/  
6118/6119/6110/611D/611E/611F/611H/611L  
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/  
6110/611D/611E/611F/611H/611L)  
Unit: mm  
6.9 0.1  
4.0  
2.5 0.1  
1.05  
0.05  
Silicon PNP epitaxial planer transistor  
(1.45)  
0.8  
0.7  
For digital circuits  
0.65 max.  
Features  
I
G
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
0.45+00..015  
G
2.5 0.5 2.5 0.5  
1
2
3
Resistance by Part Number  
I
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR6111  
UNR6112  
UNR6113  
UNR6114  
UNR6115  
UNR6116  
UNR6117  
UNR6118  
UNR6119  
UNR6110  
UNR611D  
UNR611E  
UNR611F  
UNR611H  
UNR611L  
MT-1 Type Package  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

与UN6116R相关器件

型号 品牌 获取价格 描述 数据表
UN6116S ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
UN6116-SZ PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
UN6117 PANASONIC

获取价格

Silicon PNP epitaxial planer transistor
UN6117-HW PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
UN6117Q ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
UN6117R ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
UN6117S ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
UN6117-SZ PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
UN6118 PANASONIC

获取价格

Silicon PNP epitaxial planer transistor
UN6118-HW PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon