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UG1002 PDF预览

UG1002

更新时间: 2024-02-20 05:44:17
品牌 Logo 应用领域
圣诺 - SENO /
页数 文件大小 规格书
2页 87K
描述
1.0A GLASS PASSIVATED ULTRAFAST DIODE

UG1002 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.39Is Samacsys:N
其他特性:LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

UG1002 数据手册

 浏览型号UG1002的Datasheet PDF文件第2页 
Zibo Seno Electronic Engineering Co., Ltd.  
UG1001 – UG1008  
1.0A GLASS PASSIVATED ULTRAFAST DIODE  
Features  
!
!
!
!
!
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
DO-41  
Min  
Dim  
A
Max  
!
!
!
!
!
24.5  
4.06  
0.60  
2.00  
5.21  
0.80  
3.00  
B
C
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UG1001 UG1002 UG1003 UG1004 UG1005 UG1006 UG1007 UG1008  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
V
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
R
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
(Note 1)  
1.0  
30  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
A
I
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
2.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
50  
60  
75  
40  
nS  
pF  
°C  
°C  
Tj  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
www.senocn.com  
UG1001 – UG1008  
1 of 2  

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