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UFB200FA40 PDF预览

UFB200FA40

更新时间: 2024-01-31 21:31:26
品牌 Logo 应用领域
威世 - VISHAY 整流二极管测试局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 117K
描述
Insulated Ultrafast Rectifier Module, 230 A

UFB200FA40 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-CUFM-X4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.73
其他特性:SNUBBER DIODE应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-CUFM-X4最大非重复峰值正向电流:1300 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:115 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大反向恢复时间:0.06 µs
表面贴装:NO端子面层:NICKEL (197)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

UFB200FA40 数据手册

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UFB200FA40P  
Vishay High Power Products  
Insulated Ultrafast  
Rectifier Module, 230 A  
FEATURES  
• Two fully independent diodes  
• Ceramic fully insulated package  
(VISOL = 2500 VAC  
RoHS  
)
COMPLIANT  
• Ultrafast reverse recovery  
• Ultrasoft reverse recovery current shape  
• Low forward voltage  
• Optimized for power conversion: welding and industrial  
SMPS applications  
SOT-227  
• Industry standard outline  
1
4
• Plug-in compatible with other SOT-227 packages  
• Easy to assemble  
• Direct mounting to heatsink  
• Lead (Pb)-free  
2
3
• Designed and qualified for industrial level  
DESCRIPTION  
The UFB200FA40P insulated modules integrate two state of  
the art ultrafast recovery rectifiers in the compact, industry  
standard SOT-227 package. The planar structure of the  
diodes, and the platinum doping life time control, provide a  
ultrasoft recovery current shape, together with the  
best overall performance, ruggedness and reliability  
characteristics.  
These devices are thus intended for high frequency  
applications in which the switching energy is designed not to  
be predominant portion of the total energy, such as in the  
output rectification stage of welding machines, SMPS,  
dc-to-dc converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
PRODUCT SUMMARY  
VR  
400 V  
230 A  
60 ns  
I
F(AV) at TC = 90 °C  
trr  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
400  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
TC = 90 °C  
115  
A
IFSM  
TC = 25 °C  
1300  
PD  
TC = 90 °C  
240  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 minute  
2500  
Operating junction and storage temperatures  
- 55 to 150  
°C  
Document Number: 94088  
Revision: 25-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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