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UFB200FA60P PDF预览

UFB200FA60P

更新时间: 2024-02-04 02:48:32
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 151K
描述
Insulated Ultrafast Rectifier Module, 200 A

UFB200FA60P 技术参数

生命周期:Transferred包装说明:R-CUFM-X4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59其他特性:UL RECOGNIZED
应用:ULTRA FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-CUFM-X4
最大非重复峰值正向电流:1000 A元件数量:2
相数:1端子数量:4
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:126 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大反向恢复时间:0.108 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

UFB200FA60P 数据手册

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UFB200FA60P  
Vishay High Power Products  
Insulated Ultrafast  
Rectifier Module, 200 A  
FEATURES  
• Two fully independent diodes  
• Ceramic fully insulated package  
(VISOL = 2500 VAC  
RoHS  
)
COMPLIANT  
• Ultrafast reverse recovery  
• Ultrasoft reverse recovery current shape  
• Low forward voltage  
• Optimized for power conversion: welding and industrial  
SMPS applications  
1
2
4
• Industry standard outline  
• Plug-in compatible with other SOT-227 packages  
• Easy to assemble  
3
• Direct mounting to heatsink  
• Totally lead (Pb)-free  
SOT-227  
• Designed and qualified for industrial level  
DESCRIPTION  
The UFB200FA60P insulated modules integrate two state of  
the art Vishay’s ultrafast recovery rectifiers in the compact,  
industry standard SOT-227 package. The planar structure of  
the diodes, and the platinum doping life time control, provide  
an ultrasoft recovery current shape, together with the best  
PRODUCT SUMMARY  
overall  
performance,  
ruggedness,  
and  
reliability  
VR  
600 V  
200 A  
83 ns  
characteristics.  
These devices are thus intended for high frequency  
applications in which the switching energy is designed not to  
be a predominant portion of the total energy, such as in the  
output rectification stage of welding machines, SMPS, and  
dc-to-dc converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
IF(AV)  
per module at TC = 92 °C  
trr  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
TC = 85 °C  
126  
A
IFSM  
TC = 25 °C  
1000  
PD  
TC = 85 °C  
360  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 min  
2500  
Operating junction and storage temperatures  
- 55 to 175  
°C  
Document Number: 94566  
Revision: 05-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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