UF3205-J
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS=0V, ID=250μA
55
V
VDS=55V,VGS=0V
25
μA
IGSS
VGS=±20V, VDS=0V
±100 nA
△BVDSS/△TJ
Reference to 25°C, ID=1mA
0.057
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
8.0
V
VGS=10V, ID=62A
mΩ
CISS
COSS
CRSS
3247
781
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
211
QG
QGS
QGD
tD(ON)
tR
146
35
nC
nC
nC
ns
VDS=44V, ID=62A, VGS=10V
Gate Source Charge
Gate Drain Charge
54
Turn-ON Delay Time
14
101
50
Turn-ON Rise Time
VDD=28V, ID=62A, RG=4.5Ω,
ns
VGS=10V (Note)
Turn-OFF Delay Time
tD(OFF)
tF
ns
Turn-OFF Fall-Time
65
ns
Internal Drain Inductance
Internal Source Inductance
LD
4.5
7.5
nH
nH
LS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=62A ,VGS=0V
1.3
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
110
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
390
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
tRR
69
104
215
ns
IF=62A, dI/dt=100A/μs (Note)
QRR
143
nC
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-078.a
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