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UCC1895J883B PDF预览

UCC1895J883B

更新时间： 2024-01-10 20:58:12
品牌 Logo 应用领域
德州仪器 - TI 信息通信管理开关
页数 文件大小 规格书
18页 490K
描述
0.1A SWITCHING CONTROLLER, 1000kHz SWITCHING FREQ-MAX, CDIP8, CERAMIC, DIP-8

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UCC1895J883B 技术参数

生命周期：Obsolete零件包装代码：DIP
包装说明：CERAMIC, DIP-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.2
Is Samacsys：N其他特性：CAN ALSO BE CONFIGURED IN CURRENT AND AVERAGE CURRENT-MODE
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：VOLTAGE-MODE
控制技术：PULSE WIDTH MODULATION最大输入电压：16.5 V
最小输入电压：10 V标称输入电压：12 V
JESD-30 代码：R-GDIP-T8长度：9.58 mm
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电流：0.1 A封装主体材料：CERAMIC, GLASS-SEALED
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified座面最大高度：5.08 mm
子类别：Switching Regulator or Controllers表面贴装：NO
切换器配置：PHASE-SHIFT最大切换频率：1000 kHz
技术：BICMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL宽度：7.62 mm
Base Number Matches：1

UCC1895J883B 数据手册

 浏览型号UCC1895J883B的Datasheet PDF文件第2页浏览型号UCC1895J883B的Datasheet PDF文件第3页浏览型号UCC1895J883B的Datasheet PDF文件第4页浏览型号UCC1895J883B的Datasheet PDF文件第5页浏览型号UCC1895J883B的Datasheet PDF文件第6页浏览型号UCC1895J883B的Datasheet PDF文件第7页 
TXS0102  
www.ti.com ....................................................................................................................................................... SCES640C–JANUARY 2007–REVISED MAY 2009  
2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR  
FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS  
1
FEATURES  
TYPICAL LEVEL-SHIFTER  
APPLICATIONS  
2
•
No Direction-Control Signal Needed  
•
•
•
I2C/SMBus  
UART  
•
Max Data Rates  
–
–
24 Mbps (Push Pull)  
2 Mbps (Open Drain)  
GPIO  
•
•
•
Available in the Texas Instruments NanoFree™  
Package  
DCT OR DCU PACKAGE  
(TOP VIEW)  
1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on  
B1  
1
2
3
4
8
7
6
5
B2  
B port (VCCA ≤ VCCB  
)
GND  
VCCA  
A2  
VCC Isolation Feature – If Either VCC Input Is at  
GND, Both Ports Are in the High-Impedance  
State  
VCCB  
OE  
A1  
•
•
•
•
No Power-Supply Sequencing Required –  
Either VCCA or VCCB Can Be Ramped First  
Ioff Supports Partial-Power-Down Mode  
Operation  
YZP PACKAGE  
(BOTTOM VIEW)  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D1  
C1  
B1  
A1  
D2  
C2  
B2  
A2  
4 5  
3 6  
2 7  
1 8  
A2  
A1  
VCCA  
OE  
ESD Protection Exceeds JESD 22  
VCCB  
GND  
B2  
–
A Port  
B1  
–
–
–
2500-V Human-Body Model (A114-B)  
250-V Machine Model (A115-A)  
1500-V Charged-Device Model (C101)  
–
B Port  
–
–
–
8-kV Human-Body Model (A114-B)  
250-V Machine Model (A115-A)  
1500-V Charged-Device Model (C101)  
DESCRIPTION/ORDERING INFORMATION  
This two-bit non-inverting translator is a bidirectional voltage-level translator and can be used to establish digital  
switching compatibility between mixed-voltage systems. It uses two separate configurable power-supply rails,  
with the A ports supporting operating voltages from 1.65 V to 3.6 V while it tracks the VCCA supply, and the B  
ports supporting operating voltages from 2.3 V to 5.5 V while it tracks the VCCB supply. This allows the support of  
both lower and higher logic signal levels while providing bidirectional translation capabilities between any of the  
1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.  
When the output-enable (OE) input is low, all I/Os are placed in the high-impedance state, which significantly  
reduces the power-supply quiescent current consumption.  
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a  
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NanoFree, NanoStar are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2009, Texas Instruments Incorporated  
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