U60D20S thru U60D60S
Pb
U60D20S thru U60D60S
Pb Free Plating Product
60 Amperes Dual Reverse Doubler Ultra Fast Recovery Half Bridge Rectifiers
Unit: inch (mm)
TO-3P/TO-247AD
Features
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
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ꢀ
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
.142(3.6)
.125(3.2)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
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Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
.095(2.4)
High temperature soldering guaranteed:
o
.126(3.2)
260 C, 0.16”(4.06mm)from case for 10 seconds
.110(2.8)
.050(1.25)
.045(1.15)
Mechanical Data
.030(0.75)
.017(0.45)
ꢀ
ꢀ
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
ꢀ
ꢀ
ꢀ
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Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Case
Mounting torque: 10in-lbs. Max.
Weight: 6.5 gram approximately
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Reverse Doubler
Negative
Positive
Suffix "C"
Suffix "A"
Suffix "D"
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
Rating
Symbol
Unit
U60D20S U60D40S
U60D60S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
200
400
600
V
RRM
V
RWM
V
R
Average Rectified Forward Current (Rated V )
R
I
A
A
F(AV)
Per Leg
Per Device
30 @ T = 150°C
C
60 @ T = 150°C
C
Peak Rectified Forward Current, Per Leg
I
60 @ T = 150°C
60 @ T =145°C
FRM
C
C
(Rated V , Square Wave, 20 kHz, T = 150°C)
R
C
Nonrepetitive Peak Surge Current (Surge applied at rated
load conditions, halfwave, single phase, 60 Hz) Per Leg
I
A
600
FSM
Operating Junction and Storage Temperature
T , T
− 65 to +175
°C
J
stg
THERMAL CHARACTERISTICS (Per Diode Leg)
Maximum Thermal Resistance,
− Junction−to−Case
°C/W
R
R
1.5
40
q
JC
JA
− Junction−to−Ambient
q
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1)
V
V
F
(I = 30 Amp, T = 150°C)
0.95
1.05
1.20
1.30
1.5
1.7
F
C
(I = 30 Amp, T = 25°C)
F
C
Maximum Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated DC Voltage, T = 150°C)
5000
60
5000
60
J
(Rated DC Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
(i = 1.0 A, di/dt = 50 A/ms)
F
t
35
50
ns
rr
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Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.