Datasheet > TZM5231B

TZM5231B

更新时间： 2024-09-30 22:06:59

品牌	Logo	应用领域
威世 - VISHAY		二极管测试
页数	文件大小	规格书
4页	62K
描述
Silicon Z-Diodes

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中文翻译

获取价格

数据手册

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TZM5231B 数据手册

TZM5221B...TZM5267B

Vishay Telefunken

Silicon Z–Diodes

Features

Very sharp reverse characteristic

Very high stability

Electrical data identical with the devices

1N5221B...1N5267B

Low reverse current level

V –tolerance ± 5%

94 9371

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

<300K/W, T =25 C

Type

Symbol

Value

500

Unit

thJA

amb

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

Symbol

thJA

Value

500

Unit

K/W

Junction ambient on PC board 50mmx50mmx1.6mm

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.1

Document Number 85609

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

12 3 4

中文翻译

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与TZM5231B相关器件

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TZM5231B-GS18	VISHAY	获取价格	DIODE ZENER 5.1V 500MW SOD80
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